Inventor
FECHNER PAUL S
US27 patents
⚠️ This page may combine multiple inventors who share the name “FECHNER PAUL S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HONEYWELL INT INC
14 patentsUS6603166B2Aug 5, 2003
Frontside contact on silicon-on-insulator substrate
HONEYWELL INT INC20 citations89
US7679139B2Mar 16, 2010
Non-planar silicon-on-insulator device that includes an “area-efficient” body tie
HONEYWELL INT INC8 citations84
US7192816B2Mar 20, 2007
Self-aligned body tie for a partially depleted SOI device structure
HONEYWELL INT INC14 citations84
US7732287B2Jun 8, 2010
Method of forming a body-tie
HONEYWELL INT INC8 citations83
US8975952B2Mar 10, 2015
CMOS logic circuit using passive internal body tie bias
HONEYWELL INT INC6 citations73
US9671362B2Jun 6, 2017
ph sensor with bonding agent disposed in a pattern
HONEYWELL INT INC4 citations68
US9773808B2Sep 26, 2017
Compact self-aligned implantation transistor edge resistor for SRAM SEU mitigation
HONEYWELL INT INC0 citations52
US9246501B2Jan 26, 2016
Converter for analog inputs
HONEYWELL INT INC0 citations52
US7964897B2Jun 21, 2011
Direct contact to area efficient body tie process flow
HONEYWELL INT INC2 citations52
US9817254B2Nov 14, 2017
Stabilization gas environments in a proton-exchanged lithium niobate optical chip
HONEYWELL INT INC0 citations51
US8901702B1Dec 2, 2014
Programmable electrical fuse with temperature gradient between anode and cathode
HONEYWELL INT INC0 citations51
US6576508B2Jun 10, 2003
Formation of a frontside contact on silicon-on-insulator substrate
HONEYWELL INT INC1 citations49
US7183042B2Feb 27, 2007
Bit end design for pseudo spin valve (PSV) devices
HONEYWELL INT INC0 citations48
US9664641B2May 30, 2017
pH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
HONEYWELL INT INC0 citations36
HONEYWELL INC
7 patentsUS5753955AMay 19, 1998
MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
HONEYWELL INC114 citations98
US6058041AMay 2, 2000
SEU hardening circuit
HONEYWELL INC65 citations96
US5631863AMay 20, 1997
Random access memory cell resistant to radiation induced upsets
HONEYWELL INC145 citations95
US6433983B1Aug 13, 2002
High performance output buffer with ESD protection
HONEYWELL INC32 citations92
US6180984B1Jan 30, 2001
Integrated circuit impedance device and method of manufacture therefor
HONEYWELL INC30 citations92
US5519336AMay 21, 1996
Method for electrically characterizing the insulator in SOI devices
HONEYWELL INC36 citations92
US6300666B1Oct 9, 2001
Method for forming a frontside contact to the silicon substrate of a SOI wafer in the presence of planarized contact dielectrics
HONEYWELL INC23 citations88
FECHNER PAUL S
5 patentsUS8742831B2Jun 3, 2014
Method for digital programmable optimization of mixed-signal circuits
FECHNER PAUL S7 citations83
US8575560B1Nov 5, 2013
Integrated circuit cumulative dose radiation sensor
FECHNER PAUL S15 citations83
US9618635B2Apr 11, 2017
Integrated radiation sensitive circuit
FECHNER PAUL S6 citations72
US8933412B2Jan 13, 2015
Integrated comparative radiation sensitive circuit
FECHNER PAUL S3 citations62
US8399845B2Mar 19, 2013
Neutron detector cell efficiency
FECHNER PAUL S2 citations61