Inventor
HUNG TZUNG-YU
TW13 patents
Patents
13 patentsUS6849541B1Feb 1, 2005
Method of fabricating a dual damascene copper wire
UNITED MICROELECTRONICS CORP29 citations92
US7390754B2Jun 24, 2008
Method of forming a silicide
UNITED MICROELECTRONICS CORP9 citations83
US7344978B2Mar 18, 2008
Fabrication method of semiconductor device
UNITED MICROELECTRONICS CORP9 citations82
US7482668B2Jan 27, 2009
Semiconductor device
UNITED MICROELECTRONICS CORP5 citations73
US7884028B2Feb 8, 2011
Method of removing material layer and remnant metal
UNITED MICROELECTRONICS CORP3 citations62
US7785972B2Aug 31, 2010
Method for fabricating semiconductor MOS device
UNITED MICROELECTRONICS CORP2 citations62
US7390729B2Jun 24, 2008
Method of fabricating a semiconductor device
UNITED MICROELECTRONICS CORP4 citations62
US7229920B2Jun 12, 2007
Method of fabricating metal silicide layer
UNITED MICROELECTRONICS CORP4 citations61
US7649263B2Jan 19, 2010
Semiconductor device
UNITED MICROELECTRONICS CORP1 citations51
US7595264B2Sep 29, 2009
Fabrication method of semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US7572722B2Aug 11, 2009
Method of fabricating nickel silicide
UNITED MICROELECTRONICS CORP0 citations51
US7553762B2Jun 30, 2009
Method for forming metal silicide layer
UNITED MICROELECTRONICS CORP1 citations51
US7385294B2Jun 10, 2008
Semiconductor device having nickel silicide and method of fabricating nickel silicide
UNITED MICROELECTRONICS CORP0 citations51