Inventor
BAHL SANDEEP
US6 patents
⚠️ This page may combine multiple inventors who share the name “BAHL SANDEEP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BAHL SANDEEP
3 patentsUS8513703B2Aug 20, 2013
Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
BAHL SANDEEP6 citations69
US8723226B2May 13, 2014
Manufacturable enhancement-mode group III-N HEMT with a reverse polarization cap
BAHL SANDEEP3 citations57
US8502273B2Aug 6, 2013
Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same
BAHL SANDEEP0 citations38
AGILENT TECHNOLOGIES INC
2 patentsUS6583044B2Jun 24, 2003
Buried channel in a substrate and method of making same
AGILENT TECHNOLOGIES INC8 citations71
US6992337B2Jan 31, 2006
Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
AGILENT TECHNOLOGIES INC4 citations60