Inventor
KIM BEOM-YONG
KR33 patents
⚠️ This page may combine multiple inventors who share the name “KIM BEOM-YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
25 patentsUS10593777B2Mar 17, 2020
Semiconductor device and method for fabricating the same
SK HYNIX INC16 citations94
US9704921B2Jul 11, 2017
Electronic device and method for fabricating the same
SK HYNIX INC16 citations78
US10672772B2Jun 2, 2020
Semiconductor device and method for fabricating the same
SK HYNIX INC2 citations73
US9165924B2Oct 20, 2015
Vertical channel type nonvolatile memory device and method for fabricating the same
SK HYNIX INC5 citations73
US11094778B2Aug 17, 2021
Capacitor with high work function interface layer
SK HYNIX INC2 citations72
US10700162B2Jun 30, 2020
Capacitor with high work function interface layer
SK HYNIX INC3 citations72
US10347711B2Jul 9, 2019
Semiconductor device and method for fabricating the same
SK HYNIX INC2 citations72
US8921214B2Dec 30, 2014
Variable resistance memory device and method for fabricating the same
SK HYNIX INC5 citations72
US12266711B2Apr 1, 2025
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations62
US11855172B2Dec 26, 2023
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations62
US11342437B2May 24, 2022
Semiconductor device and method for fabricating the same
SK HYNIX INC0 citations62
US11043533B2Jun 22, 2021
Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
SK HYNIX INC0 citations62
US10910383B2Feb 2, 2021
Semiconductor device and method for fabricating the same
SK HYNIX INC1 citations62
US9385311B2Jul 5, 2016
Semiconductor device and electronic device including the same
SK HYNIX INC2 citations61
US10381407B2Aug 13, 2019
Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
SK HYNIX INC0 citations52
US10224369B2Mar 5, 2019
Threshold switching device, method for fabricating the same and electronic device including the same
SK HYNIX INC0 citations52
US10217797B2Feb 26, 2019
Switching device, and resistive random access memory including the same as a selection device
SK HYNIX INC0 citations52
US9865651B2Jan 9, 2018
Threshold switching device, method for fabricating the same and electronic device including the same
SK HYNIX INC0 citations52
US9825092B2Nov 21, 2017
Switching device, and resistive random access memory including the same as a selection device
SK HYNIX INC1 citations52
US9659828B2May 23, 2017
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
SK HYNIX INC1 citations52
US9064567B2Jun 23, 2015
Electronic device including a memory and method for fabricating the same
SK HYNIX INC0 citations52
US9035274B2May 19, 2015
Semiconductor device having a stack structure including a stoichiometric material and a non-stoichiometric material, and method for fabricating the same
SK HYNIX INC0 citations52
US9318595B2Apr 19, 2016
Method of forming gate dielectric layer and method of fabricating semiconductor device
SK HYNIX INC0 citations51
US9130153B2Sep 8, 2015
Semiconductor device and electronic device including the same
SK HYNIX INC1 citations51
US9917250B2Mar 13, 2018
Switching device, method of fabricating the same, and resistive random access memory including the switching device as a selection device
SK HYNIX INC0 citations39
JI YUN-HYUCK
2 patentsUS9431402B2Aug 30, 2016
Semiconductor device having buried bit line and method for fabricating the same
JI YUN-HYUCK3 citations71
US9337108B2May 10, 2016
Semiconductor device with metal gate and high-k dielectric layer, CMOS integrated circuit, and method for fabricating the same
JI YUN-HYUCK1 citations51