Inventor
CORRION ANDREA
US24 patents
⚠️ This page may combine multiple inventors who share the name “CORRION ANDREA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HRL LAB LLC
17 patentsUS9142626B1Sep 22, 2015
Stepped field plate wide bandgap field-effect transistor and method
HRL LAB LLC18 citations92
US8383471B1Feb 26, 2013
Self aligned sidewall gate GaN HEMT
HRL LAB LLC28 citations90
US9954090B1Apr 24, 2018
Monolithic integration of group III nitride epitaxial layers
HRL LAB LLC8 citations84
US9929243B1Mar 27, 2018
Stepped field plate wide bandgap field-effect transistor and method
HRL LAB LLC4 citations84
US9490357B2Nov 8, 2016
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC7 citations83
US9419122B1Aug 16, 2016
Etch-based fabrication process for stepped field-plate wide-bandgap
HRL LAB LLC4 citations83
US9252247B1Feb 2, 2016
Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs
HRL LAB LLC6 citations83
US9202880B1Dec 1, 2015
Etch-based fabrication process for stepped field-plate wide-bandgap
HRL LAB LLC10 citations83
US8980759B1Mar 17, 2015
Method of fabricating slanted field-plate GaN heterojunction field-effect transistor
HRL LAB LLC7 citations83
US10217648B1Feb 26, 2019
Fabrication of microfluidic channels in diamond
HRL LAB LLC8 citations81
US10418473B1Sep 17, 2019
Monolithic integration of group III nitride epitaxial layers
HRL LAB LLC3 citations73
US10714605B2Jul 14, 2020
Highly scaled linear GaN HEMT Structures
HRL LAB LLC2 citations72
US8698201B1Apr 15, 2014
Gate metallization methods for self-aligned sidewall gate GaN HEMT
HRL LAB LLC5 citations71
US9378949B1Jun 28, 2016
Monolithic integration of group III nitride epitaxial layers
HRL LAB LLC1 citations63
US8796736B1Aug 5, 2014
Monolithic integration of group III nitride epitaxial layers
HRL LAB LLC2 citations63
US12230702B2Feb 18, 2025
Self-passivated nitrogen-polar III-nitride transistor
HRL LAB LLC1 citations52
US10325997B2Jun 18, 2019
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC0 citations51