Inventor
CHO HYUN-CHUL
KR24 patents
⚠️ This page may combine multiple inventors who share the name “CHO HYUN-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS7379333B2May 27, 2008
Page-buffer and non-volatile semiconductor memory including page buffer
SAMSUNG ELECTRONICS CO LTD34 citations96
US7298648B2Nov 20, 2007
Page buffer and multi-state nonvolatile memory device including the same
SAMSUNG ELECTRONICS CO LTD39 citations96
US7173861B2Feb 6, 2007
Nonvolatile memory device for preventing bitline high voltage from discharge
SAMSUNG ELECTRONICS CO LTD21 citations92
US10740444B2Aug 11, 2020
Electronic device and method for performing authentication
SAMSUNG ELECTRONICS CO LTD10 citations80
US7724575B2May 25, 2010
Page-buffer and non-volatile semiconductor memory including page buffer
SAMSUNG ELECTRONICS CO LTD7 citations74
US7480177B2Jan 20, 2009
Page buffer and multi-state nonvolatile memory device including the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7675774B2Mar 9, 2010
Page buffer and multi-state nonvolatile memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7259994B2Aug 21, 2007
Integrated circuit memory devices having data output ports that support extended read cycle time intervals
SAMSUNG ELECTRONICS CO LTD2 citations62
SK HYNIX INC
6 patentsUS11227664B2Jan 18, 2022
Memory device and method of operating the same
SK HYNIX INC3 citations72
US12020757B2Jun 25, 2024
Memory device for generating pump clock and operating method of the memory device
SK HYNIX INC0 citations62
US11205486B2Dec 21, 2021
Voltage generator and memory device having the voltage generator
SK HYNIX INC0 citations62
US11081146B2Aug 3, 2021
Storage device and operating method of the storage device for controlling voltage rising time
SK HYNIX INC0 citations62
US9134749B2Sep 15, 2015
Internal voltage generator and method of generating internal voltage
SK HYNIX INC0 citations52
US11309038B2Apr 19, 2022
Memory device and method of operating the memory device
SK HYNIX INC0 citations51