Inventor
JIANG SIN-YI
TW16 patents
⚠️ This page may combine multiple inventors who share the name “JIANG SIN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS12015099B2Jun 18, 2024
Semiconductor sensor and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11855237B2Dec 26, 2023
Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12495632B2Dec 9, 2025
Semiconductor image sensor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12363969B2Jul 15, 2025
Passivation layer for epitaxial semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166054B2Dec 10, 2024
Image sensor with passivation layer for dark current reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148853B2Nov 19, 2024
Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125934B2Oct 22, 2024
Method of manufacturing an optical sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908900B2Feb 20, 2024
Passivation layer for epitaxial semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848345B2Dec 19, 2023
Image sensor with passivation layer for dark current reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11600737B2Mar 7, 2023
Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508817B2Nov 22, 2022
Passivation layer for epitaxial semiconductor process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901393B2Feb 13, 2024
Image sensor and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12261190B2Mar 25, 2025
Vertically stacked light sensors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47