Inventor
STEIN RENE
DE14 patents
⚠️ This page may combine multiple inventors who share the name “STEIN RENE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
12 patentsUS5964943AOct 12, 1999
Method of producing boron-doped monocrystalline silicon carbide
SIEMENS AG95 citations97
US5382822AJan 17, 1995
Metal-insulator semiconductor field-effect transistor
SIEMENS AG54 citations95
US6497764B2Dec 24, 2002
Method for growing SiC single crystals
SIEMENS AG25 citations92
US5985026ANov 16, 1999
Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers
SIEMENS AG19 citations92
US5968265AOct 19, 1999
Method for producing silicon carbide monocrystals
SIEMENS AG19 citations92
US5227034AJul 13, 1993
Method for electrolytic etching of silicon carbide
SIEMENS AG28 citations92
US6723166B2Apr 20, 2004
Seed crystal holder with lateral mount for an SiC seed crystal
SIEMENS AG22 citations89
US6773505B2Aug 10, 2004
Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure
SIEMENS AG17 citations83
US5211801AMay 18, 1993
Method for manufacturing single-crystal silicon carbide
SIEMENS AG20 citations81
US6770136B2Aug 3, 2004
Device having a foil-lined crucible for the sublimation growth of an SiC single crystal
SIEMENS AG5 citations62
US6689212B2Feb 10, 2004
Method for growing an α-SiC bulk single crystal
SIEMENS AG2 citations62
US6344085B2Feb 5, 2002
Device and method for producing at least one SiC single crystal
SIEMENS AG5 citations62
SILTRONIC AG
2 patentsUS11982015B2May 14, 2024
Method for depositing an epitaxial layer on a front side of a semiconductor wafer, and device for carrying out the method
SILTRONIC AG0 citations50
US11538683B2Dec 27, 2022
Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
SILTRONIC AG0 citations50