Inventor

CHANG KUO-PIN

TW52 patents

⚠️ This page may combine multiple inventors who share the name “CHANG KUO-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG KUO-PIN

MACRONIX INT CO LTD

Resistive memory structure with buffer layer

Sub-block erase

Operation method for multi-level switching of metal-oxide based RRAM

Memory device

3D non-volatile memory array with sub-block erase architecture

And-type SGVC architecture for 3D NAND flash

Resistive memory structure with buffer layer

Programming multibit memory cells

NAND flash biasing operation

Hot carrier generation and programming in NAND flash

Semiconductor structure and manufacturing method thereof

Reading method for preventing read disturbance and memory using the same

Sub-block page erase in 3D p-channel flash memory

Memory device and associated erase method

Systems and methods for reduced program disturb for 3D NAND flash

Memory device and reading method thereof

Memory device and data erasing method thereof

Forced-bias method in sub-block erase

Via contact, memory device, and method of forming semiconductor structure

Memory device and control method thereof

Memory array and operating method of same

TAIWAN SEMICONDUCTOR MFG CO LTD

Memory device and method for programming the same

Method of manufacturing semiconductor structure

One-time programmable (OTP) memory and method of operating the same

Semiconductor device

Device and method for operating the same

Semiconductor device and method for fabricating the same

Phase-change material (PCM) radio frequency (RF) switching device with thin self-aligned dielectric layer

High-frequency, low-voltage switch devices and methods of manufacturing thereof

Heat controlled switch

Method of manufacturing semiconductor structure

Selector for memory device

Vertical 1T1R structure for embedded memory

Voltage regulator having variable output capacitance and methods for forming the same

Memory device and method for fabricating the same

Cross-point architecture for PCRAM

Integrated circuit, memory device and method of manufacturing the same

Phase change material switch with improved thermal confinement and methods for forming the same

Phase change material switch circuit for enhanced signal isolation and methods of forming the same

Optical device with phase-change materials and method of fabricating the same

Method of manufacturing semiconductor structure

Semiconductor structure and manufacturing method thereof

CHANG KUO-PIN

Operating method of electrical pulse voltage for RRAM application

Resistive memory device and manufacturing method thereof and operating method thereof

Diode memory

Memory and method of fabricating the same

CHIEN WEI-CHIH

Aluminum copper oxide based memory devices and methods for manufacture

(unassigned)

Clip assembly for a pacifier

MACRONIC INTERNAT CO LTD

Semiconductor device, data element thereof and method of fabricating the same

LUE HANG-TING

Transistor having an adjustable gate resistance and semiconductor device comprising the same