Inventor

JANG JOONSUC

KR19 patents

⚠️ This page may combine multiple inventors who share the name “JANG JOONSUC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANG JOONSUC

SAMSUNG ELECTRONICS CO LTD

Memory device, method of operating the same, and method of operating storage device including the same

Storage devices and methods of operating storage devices

Nonvolatile memory device performing two-way channel precharge

Operating method of memory system including memory controller and nonvolatile memory device

Nonvolatile memory device and operation method of detecting defective memory cells

Nonvolatile memory device and operation method of detecting defective memory cells

Operating method of memory system including memory controller and nonvolatile memory device

Storage devices and methods of operating storage devices

Flash memory device and data recover read method thereof

Non-volatile memory device, programming method thereof, and storage device having the same

Non-volatile memory device, programming method thereof, and storage device having the same

Nonvolatile memory device and method of operating the same

Storage device performing read operation by using time interleaved sampling page buffer

Nonvolatile memory device and programming method of nonvolatile memory

Memory device and method for improving sensing characteristics of memory cells

Memory device with conditional skip of verify operation during write and operating method thereof

Method of operating a memory device by performing a program operation using a coarse verification voltage and a fine verification voltage and a memory device and a memory system employing the same

LEE JI-SANG

Nonvolatile memory devices with page flags, methods of operation and memory systems including same

JANG JOONSUC

Multi-level cell memory device and operating method thereof