Inventor
MACIVER BERNARD A
US16 patents
Patents
16 patentsUS4893509AJan 16, 1990
Method and product for fabricating a resonant-bridge microaccelerometer
GEN MOTORS CORP135 citations96
US4786952ANov 22, 1988
High voltage depletion mode MOS power field effect transistor
GEN MOTORS CORP119 citations95
US4769685ASep 6, 1988
Recessed-gate junction-MOS field effect transistor
GEN MOTORS CORP58 citations95
US4746960AMay 24, 1988
Vertical depletion-mode j-MOSFET
GEN MOTORS CORP75 citations94
US4554208ANov 19, 1985
Metal bearing surface having an adherent score-resistant coating
GEN MOTORS CORP117 citations94
US4652334AMar 24, 1987
Method for patterning silicon dioxide with high resolution in three dimensions
GEN MOTORS CORP47 citations92
US4611220ASep 9, 1986
Junction-MOS power field effect transistor
GEN MOTORS CORP33 citations92
US4096622AJun 27, 1978
Ion implanted Schottky barrier diode
GEN MOTORS CORP35 citations92
US4144100AMar 13, 1979
Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
GEN MOTORS CORP34 citations91
US4410611AOct 18, 1983
Hard and adherent layers from organic resin coatings
GEN MOTORS CORP27 citations82
US4133704AJan 9, 1979
Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon
GEN MOTORS CORP20 citations80
US4800170AJan 24, 1989
Process for forming in a silicon oxide layer a portion with vertical side walls
GEN MOTORS CORP13 citations73
US4321317AMar 23, 1982
High resolution lithography system for microelectronic fabrication
GEN MOTORS CORP15 citations73
US4618505AOct 21, 1986
Method of making adherent score-resistant coating for metals
GEN MOTORS CORP17 citations72
US4133701AJan 9, 1979
Selective enhancement of phosphorus diffusion by implanting halogen ions
GEN MOTORS CORP18 citations72
US4811063AMar 7, 1989
JMOS transistor utilizing polysilicon sinks
GEN MOTORS CORP1 citations50