Inventor
USHIKAWA HARUNORI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “USHIKAWA HARUNORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
11 patentsUS5775889AJul 7, 1998
Heat treatment process for preventing slips in semiconductor wafers
TOKYO ELECTRON LTD395 citations98
US5904872AMay 18, 1999
Heating device, method of manufacturing the same, and processing apparatus using the same
TOKYO ELECTRON LTD72 citations96
US5378283AJan 3, 1995
Treating device
TOKYO ELECTRON LTD96 citations96
US5310339AMay 10, 1994
Heat treatment apparatus having a wafer boat
TOKYO ELECTRON LTD96 citations96
US6140256AOct 31, 2000
Method and device for treating semiconductor with treating gas while substrate is heated
TOKYO ELECTRON LTD28 citations92
US6007633ADec 28, 1999
Single-substrate-processing apparatus in semiconductor processing system
TOKYO ELECTRON LTD29 citations92
US5225378AJul 6, 1993
Method of forming a phosphorus doped silicon film
TOKYO ELECTRON LTD28 citations92
US5116784AMay 26, 1992
Method of forming semiconductor film
TOKYO ELECTRON LTD38 citations92
US5536320AJul 16, 1996
Processing apparatus
TOKYO ELECTRON LTD30 citations91
US6551896B2Apr 22, 2003
Capacitor for analog circuit, and manufacturing method thereof
TOKYO ELECTRON LTD16 citations83
US5984607ANov 16, 1999
Transfer apparatus, transfer method, treatment apparatus and treatment method
TOKYO ELECTRON LTD18 citations83
GONOHE NARISHI
4 patentsUS8158197B2Apr 17, 2012
Method for forming tantalum nitride film
GONOHE NARISHI2 citations58
US8796142B2Aug 5, 2014
Method for forming tantalum nitride film
GONOHE NARISHI0 citations37
US8158198B2Apr 17, 2012
Method for forming tantalum nitride film
GONOHE NARISHI0 citations37
US8105468B2Jan 31, 2012
Method for forming tantalum nitride film
GONOHE NARISHI0 citations37