Inventor
ISHIMARU KAZUNARI
JP25 patents
Patents
25 patentsUS6977837B2Dec 20, 2005
Semiconductor memory including static random access memory formed of FinFET
TOSHIBA KK67 citations98
US6656826B2Dec 2, 2003
Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device
TOSHIBA KK106 citations98
US5578518ANov 26, 1996
Method of manufacturing a trench isolation having round corners
TOSHIBA KK159 citations98
US7129550B2Oct 31, 2006
Fin-shaped semiconductor device
TOSHIBA KK56 citations96
US7723171B2May 25, 2010
Semiconductor device and method of fabricating the same
TOSHIBA KK20 citations92
US6627528B1Sep 30, 2003
Semiconductor device and its manufacturing process
TOSHIBA KK25 citations92
US6365472B1Apr 2, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK32 citations92
US5998849ADec 7, 1999
Semiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free state
TOSHIBA KK17 citations92
US7772692B2Aug 10, 2010
Semiconductor device with cooling member
TOSHIBA KK15 citations84
US7371644B2May 13, 2008
Semiconductor device and method of fabricating the same
TOSHIBA KK10 citations84
US7235469B2Jun 26, 2007
Semiconductor device and method for manufacturing the same
TOSHIBA KK18 citations84
US7687368B2Mar 30, 2010
Semiconductor device manufacturing method
TOSHIBA KK8 citations83
US7164175B2Jan 16, 2007
Semiconductor device with silicon-film fins and method of manufacturing the same
TOSHIBA KK15 citations83
US7061054B2Jun 13, 2006
Semiconductor device and semiconductor device manufacturing method
TOSHIBA KK16 citations79
US5731623AMar 24, 1998
Bipolar device with trench structure
TOSHIBA KK15 citations74
US5518961AMay 21, 1996
Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same
TOSHIBA KK11 citations74
US5496744AMar 5, 1996
Method of fabricating complementary poly emitter transistors
TOSHIBA KK8 citations74
US5397910AMar 14, 1995
Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same
TOSHIBA KK12 citations74
US5886387AMar 23, 1999
BiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thickness
TOSHIBA KK8 citations71
US7468923B2Dec 23, 2008
Semiconductor integrated circuit
TOSHIBA KK6 citations63
US7432542B2Oct 7, 2008
Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same
TOSHIBA KK6 citations63
US6066543AMay 23, 2000
Method of manufacturing a gap filling for shallow trench isolation
TOSHIBA KK5 citations63
US5960272ASep 28, 1999
Element-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the construct
TOSHIBA KK5 citations63
US6355982B2Mar 12, 2002
Semiconductor memory device having pairs of bit lines arranged on both sides of memory cells
TOSHIBA KK5 citations62
US7541245B2Jun 2, 2009
Semiconductor device with silicon-film fins and method of manufacturing the same
TOSHIBA KK0 citations51