Inventor
TAMAMUSHI SHUICHI
JP31 patents
⚠️ This page may combine multiple inventors who share the name “TAMAMUSHI SHUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
10 patentsUS5627626AMay 6, 1997
Projectin exposure apparatus
TOSHIBA KK102 citations99
US5621498AApr 15, 1997
Projection exposure apparatus
TOSHIBA KK101 citations99
US5707501AJan 13, 1998
Filter manufacturing apparatus
TOSHIBA KK81 citations96
US5885747AMar 23, 1999
Charged beam lithography method
TOSHIBA KK63 citations95
US5760410AJun 2, 1998
Electron beam lithography apparatus and method
TOSHIBA KK22 citations92
US5047646ASep 10, 1991
Method of correcting astigmatism of variable shaped beam
TOSHIBA KK35 citations92
US5894057AApr 13, 1999
Charged beam drawing method
TOSHIBA KK17 citations83
US5850083ADec 15, 1998
Charged particle beam lithograph apparatus
TOSHIBA KK12 citations73
US6319642B1Nov 20, 2001
Electron beam exposure apparatus
TOSHIBA KK13 citations72
US5793041AAug 11, 1998
Method for correcting astigmatism and focusing in charged particle optical lens-barrel
TOSHIBA KK8 citations70
NUFLARE TECHNOLOGY INC
9 patentsUS7834333B2Nov 16, 2010
Charged particle beam lithography system and method for evaluating the same
NUFLARE TECHNOLOGY INC13 citations84
US7643130B2Jan 5, 2010
Position measuring apparatus and positional deviation measuring method
NUFLARE TECHNOLOGY INC19 citations84
US7554107B2Jun 30, 2009
Writing method and writing apparatus of charged particle beam, positional deviation measuring method, and position measuring apparatus
NUFLARE TECHNOLOGY INC10 citations84
US7679068B2Mar 16, 2010
Method of calculating deflection aberration correcting voltage and charged particle beam writing method
NUFLARE TECHNOLOGY INC8 citations83
US7485879B2Feb 3, 2009
Electron beam writing apparatus and writing method
NUFLARE TECHNOLOGY INC9 citations83
US9343266B2May 17, 2016
Charged particle beam pattern writing method and charged particle beam writing apparatus that corrects beam rotation utilizing a correlation table
NUFLARE TECHNOLOGY INC3 citations73
US8927941B2Jan 6, 2015
Multi charged particle beam writing apparatus and multi charged particle beam writing method with fixed voltage ratio einzel lens
NUFLARE TECHNOLOGY INC6 citations73
US9406117B2Aug 2, 2016
Inspection system and method for inspecting line width and/or positional errors of a pattern
NUFLARE TECHNOLOGY INC3 citations72
US7800084B2Sep 21, 2010
System and method for charged-particle beam lithography
NUFLARE TECHNOLOGY INC6 citations63
SAMSUNG ELECTRONICS CO LTD
4 patentsUS10012900B2Jul 3, 2018
Method of correcting mask pattern and method of manufacturing reticle
SAMSUNG ELECTRONICS CO LTD12 citations84
US10497534B2Dec 3, 2019
Aperture system of electron beam apparatus, electron beam exposure apparatus, and electron beam exposure apparatus system
SAMSUNG ELECTRONICS CO LTD0 citations51
US9583305B2Feb 28, 2017
Exposure method using control of settling times and methods of manufacturing integrated circuit devices by using the same
SAMSUNG ELECTRONICS CO LTD0 citations38
US9709893B2Jul 18, 2017
Exposure method using electron beam and substrate manufacturing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations35
TAMAMUSHI SHUICHI
4 patentsUS8229207B2Jul 24, 2012
Mask inspection apparatus and mask inspection method
TAMAMUSHI SHUICHI7 citations83
US8277603B2Oct 2, 2012
Move mechanism for moving target object and charged particle beam writing apparatus
TAMAMUSHI SHUICHI11 citations81
US8452074B2May 28, 2013
Apparatus and method for pattern inspection
TAMAMUSHI SHUICHI4 citations62
US8306310B2Nov 6, 2012
Apparatus and method for pattern inspection
TAMAMUSHI SHUICHI5 citations62