Inventor
LEFEVRE SCOTT W
US6 patents
Patents
6 patentsUS9054050B2Jun 9, 2015
Method for deep silicon etching using gas pulsing
TOKYO ELECTRON LTD7 citations81
US10971372B2Apr 6, 2021
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD2 citations71
US11538691B2Dec 27, 2022
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD0 citations61
US11380554B2Jul 5, 2022
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations61
US10580660B2Mar 3, 2020
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations51
US8962067B2Feb 24, 2015
Real time process control of the polymer dispersion index
TOKYO ELECTRON LTD0 citations28