Inventor
AGGARWAL RAJNI J
US19 patents
⚠️ This page may combine multiple inventors who share the name “AGGARWAL RAJNI J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
15 patentsUS5346851ASep 13, 1994
Method of fabricating Shannon Cell circuits
TEXAS INSTRUMENTS INC24 citations92
US9548298B1Jan 17, 2017
Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers
TEXAS INSTRUMENTS INC6 citations83
US9006838B2Apr 14, 2015
High sheet resistor in CMOS flow
TEXAS INSTRUMENTS INC7 citations83
US9665675B2May 30, 2017
Method to improve transistor matching
TEXAS INSTRUMENTS INC2 citations69
US12513974B2Dec 30, 2025
Reduced silicon dislocation defects from deep SI trench integration
TEXAS INSTRUMENTS INC0 citations62
US9728581B2Aug 8, 2017
Construction of a hall-effect sensor in a buried isolation region
TEXAS INSTRUMENTS INC1 citations62
US7968878B2Jun 28, 2011
Electrical test structure to detect stress induced defects using diodes
TEXAS INSTRUMENTS INC6 citations62
US10339251B2Jul 2, 2019
Method to improve transistor matching
TEXAS INSTRUMENTS INC1 citations59
US8377719B2Feb 19, 2013
Drawn dummy FeCAP, via and metal structures
TEXAS INSTRUMENTS INC0 citations52
US12087813B2Sep 10, 2024
Deep trench isolation with field oxide
TEXAS INSTRUMENTS INC0 citations51
US10872925B2Dec 22, 2020
Hall sensor with buried hall plate
TEXAS INSTRUMENTS INC0 citations51
US10396122B2Aug 27, 2019
Hall sensor with buried hall plate
TEXAS INSTRUMENTS INC0 citations51
US9818740B2Nov 14, 2017
Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers
TEXAS INSTRUMENTS INC0 citations51
US9698211B2Jul 4, 2017
High sheet resistor in CMOS flow
TEXAS INSTRUMENTS INC0 citations51
US9362270B2Jun 7, 2016
High sheet resistor in CMOS flow
TEXAS INSTRUMENTS INC0 citations51