Inventor
MA TRISTAN Y
US14 patents
⚠️ This page may combine multiple inventors who share the name “MA TRISTAN Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
9 patentsUS10222202B2Mar 5, 2019
Three dimensional structure fabrication control using novel processing system
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US10310379B2Jun 4, 2019
Multiple patterning approach using ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC5 citations71
US10553448B2Feb 4, 2020
Techniques for processing a polycrystalline layer using an angled ion beam
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations68
US10990014B2Apr 27, 2021
Performance improvement of EUV photoresist by ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations62
US9520290B1Dec 13, 2016
Ion implantation for improved etch performance
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations59
US10937663B2Mar 2, 2021
Selective photoresist etching for bridge defect removal
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations53
US10545408B2Jan 28, 2020
Performance improvement of EUV photoresist by ion implantation
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations51
US9512517B2Dec 6, 2016
Multiple exposure treatment for processing a patterning feature
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations50
US9735013B2Aug 15, 2017
Ion implantation for improved contact hole critical dimension uniformity
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations45
APPLIED MATERIALS INC
5 patentsUS11942361B2Mar 26, 2024
Semiconductor device cavity formation using directional deposition
APPLIED MATERIALS INC2 citations71
US11459652B2Oct 4, 2022
Techniques and device structures based upon directional dielectric deposition and bottom-up fill
APPLIED MATERIALS INC2 citations71
US12191156B2Jan 7, 2025
Ribbon beam plasma enhanced chemical vapor deposition system for anisotropic deposition of thin films
APPLIED MATERIALS INC0 citations62
US12422210B2Sep 23, 2025
Techniques and device structures based upon directional dielectric deposition and bottom-up fill
APPLIED MATERIALS INC0 citations60
US11778832B2Oct 3, 2023
Wordline contact formation in NAND devices
APPLIED MATERIALS INC0 citations50