Inventor

RODDER MARK STEPHEN

US7 patents

⚠️ This page may combine multiple inventors who share the name “RODDER MARK STEPHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

5 patents

US9685564B2Jun 20, 2017

Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures

SAMSUNG ELECTRONICS CO LTD13 citations83

US10930768B2Feb 23, 2021

WANG WEI-E

1 patent

US9343303B2May 17, 2016

Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices

WANG WEI-E11 citations81

TEXAS INSTRUMENTS INC

1 patent

US6087248AJul 11, 2000

Method of forming a transistor having thin doped semiconductor gate

TEXAS INSTRUMENTS INC11 citations70

RODDER MARK STEPHEN

SAMSUNG ELECTRONICS CO LTD

Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures

Low current leakage finFET and methods of making the same

FinFET with reduced extension resistance and methods of manufacturing the same

Nanosheet field effect transistor cell architecture

Semiconductor device and method for making the same

WANG WEI-E

Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices

TEXAS INSTRUMENTS INC

Method of forming a transistor having thin doped semiconductor gate