Inventor
MEYERSON BERNARD S
US36 patents
⚠️ This page may combine multiple inventors who share the name “MEYERSON BERNARD S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
35 patentsUS5714777AFeb 3, 1998
Si/SiGe vertical junction field effect transistor
IBM218 citations99
US5298452AMar 29, 1994
Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
IBM194 citations99
US4647494AMar 3, 1987
Silicon/carbon protection of metallic magnetic structures
IBM157 citations99
US5808344ASep 15, 1998
Single-transistor logic and CMOS inverters
IBM95 citations98
US5540785AJul 30, 1996
Fabrication of defect free silicon on an insulating substrate
IBM106 citations98
US5461250AOct 24, 1995
SiGe thin film or SOI MOSFET and method for making the same
IBM386 citations98
US5316958AMay 31, 1994
Method of dopant enhancement in an epitaxial silicon layer by using germanium
IBM131 citations98
US5462883AOct 31, 1995
Method of fabricating defect-free silicon on an insulating substrate
IBM81 citations96
US5246884ASep 21, 1993
Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop
IBM174 citations96
US5159508AOct 27, 1992
Magnetic head slider having a protective coating thereon
IBM111 citations96
US5117271AMay 26, 1992
Low capacitance bipolar junction transistor and fabrication process therfor
IBM56 citations96
US4684542AAug 4, 1987
Low pressure chemical vapor deposition of tungsten silicide
IBM150 citations96
US5160987ANov 3, 1992
Three-dimensional semiconductor structures formed from planar layers
IBM197 citations94
US5008207AApr 16, 1991
Method of fabricating a narrow base transistor
IBM57 citations94
US5607511AMar 4, 1997
Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
IBM33 citations93
US5057450AOct 15, 1991
Method for fabricating silicon-on-insulator structures
IBM44 citations92
US5031029AJul 9, 1991
Copper device and use thereof with semiconductor devices
IBM28 citations92
US4436797AMar 13, 1984
X-Ray mask
IBM40 citations92
US5106767AApr 21, 1992
Process for fabricating low capacitance bipolar junction transistor
IBM56 citations91
US5352912AOct 4, 1994
Graded bandgap single-crystal emitter heterojunction bipolar transistor
IBM52 citations89
US4592933AJun 3, 1986
High efficiency homogeneous chemical vapor deposition
IBM52 citations89
US4504331AMar 12, 1985
Silicon dopant source in intermetallic semiconductor growth operations
IBM20 citations82
US5357899AOct 25, 1994
Epitaxial silicon membranes
IBM17 citations81
US5181964AJan 26, 1993
Single ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactor
IBM12 citations74
US4526593AJul 2, 1985
Restrictor plug device with filter for a gas supply system
IBM19 citations74
US5273829ADec 28, 1993
Epitaxial silicon membranes
IBM11 citations73
US5241131AAug 31, 1993
Erosion/corrosion resistant diaphragm
IBM18 citations72
US4972246ANov 20, 1990
Effective narrow band gap base transistor
IBM14 citations72
US5319240AJun 7, 1994
Three dimensional integrated device and circuit structures
IBM13 citations71
US5151383ASep 29, 1992
Method for producing high energy electroluminescent devices
IBM9 citations68
US7647519B2Jan 12, 2010
System and computer program product for dynamically managing power in microprocessor chips according to present processing demands
IBM3 citations62
US7405422B2Jul 29, 2008
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
IBM2 citations60
US5409852AApr 25, 1995
Method of Manufacturing three dimensional integrated device and circuit structures
IBM2 citations60
US7652288B2Jan 26, 2010
Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
IBM0 citations50
US5119157AJun 2, 1992
Semiconductor device with self-aligned contact to buried subcollector
IBM0 citations41