Inventor
KAMATA YOSHIKI
JP17 patents
⚠️ This page may combine multiple inventors who share the name “KAMATA YOSHIKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
7 patentsUS6593618B2Jul 15, 2003
MIS semiconductor device having an elevated source/drain structure
TOSHIBA KK22 citations92
US10283707B2May 7, 2019
Superlattice memory having GeTe layer and nitrogen-doped Sb2Te3 layer and memory device having the same
TOSHIBA KK9 citations83
US7986016B2Jul 26, 2011
Semiconductor device and associated manufacturing methodology for decreasing thermal instability between an insulating layer and a substrate
TOSHIBA KK7 citations83
US10026895B2Jul 17, 2018
Superlattice memory and crosspoint memory device
TOSHIBA KK4 citations72
US10026780B2Jul 17, 2018
Superlattice memory and crosspoint memory device
TOSHIBA KK3 citations72
US10559750B2Feb 11, 2020
Nonvolatile memory device and method of manufacturing the same
TOSHIBA KK1 citations62
US10177309B1Jan 8, 2019
Memory device
TOSHIBA KK1 citations61
KIOXIA CORP
6 patentsUS11765916B2Sep 19, 2023
Memory device and method of manufacturing memory device
KIOXIA CORP2 citations72
US12069872B2Aug 20, 2024
Memory device and method of manufacturing memory device
KIOXIA CORP0 citations62
US11948636B2Apr 2, 2024
Memory device
KIOXIA CORP0 citations62
US12520503B2Jan 6, 2026
Variable resistance non-volatile memory
KIOXIA CORP0 citations52
US11985834B2May 14, 2024
Semiconductor memory device having memory layer extending between insulation layer and semiconductor layer
KIOXIA CORP0 citations51
US12029145B2Jul 2, 2024
Memory device
KIOXIA CORP0 citations45