Inventor
MIZUTANI YOSHIHISA
JP27 patents
⚠️ This page may combine multiple inventors who share the name “MIZUTANI YOSHIHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
9 patentsUS4882707ANov 21, 1989
Non-volatile semi-conductor memory device with double gate structure
TOSHIBA KK88 citations96
US4661833AApr 28, 1987
Electrically erasable and programmable read only memory
TOSHIBA KK100 citations96
US6094244AJul 25, 2000
Reflective liquid crystal display device
TOSHIBA KK31 citations92
US4754320AJun 28, 1988
EEPROM with sidewall control gate
TOSHIBA KK34 citations91
US4878199AOct 31, 1989
Semiconductor memory device
TOSHIBA KK20 citations82
US4637128AJan 20, 1987
Method of producing semiconductor device
TOSHIBA KK20 citations82
US4642880AFeb 17, 1987
Method for manufacturing a recessed semiconductor device
TOSHIBA KK19 citations75
US5172196ADec 15, 1992
Nonvolatile semiconductor memory device
TOSHIBA KK15 citations73
US4745453AMay 17, 1988
Semiconductor device
TOSHIBA KK5 citations63
DAICEL CORP
9 patentsUS10562836B2Feb 18, 2020
Process for producing acetic acid
DAICEL CORP2 citations73
US10183905B2Jan 22, 2019
Method for producing acetic acid
DAICEL CORP2 citations67
US10894759B2Jan 19, 2021
Method and apparatus for producing acetic acid
DAICEL CORP1 citations62
US10428006B2Oct 1, 2019
Method and apparatus for producing acetic acid
DAICEL CORP1 citations62
US10265639B2Apr 23, 2019
Process for producing acetic acid
DAICEL CORP1 citations62
US10246399B2Apr 2, 2019
Process for producing acetic acid
DAICEL CORP1 citations62
US10661196B2May 26, 2020
Process for producing acetic acid
DAICEL CORP0 citations52
US10633322B2Apr 28, 2020
Process for producing acetic acid
DAICEL CORP0 citations52
US10428004B2Oct 1, 2019
Method for producing acetic acid
DAICEL CORP0 citations42
TOKYO SHIBAURA ELECTRIC CO
8 patentsUS4665418AMay 12, 1987
Semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO35 citations92
US4437225AMar 20, 1984
Method of forming SOS devices by selective laser treatment and reactive formation of isolation regions
TOKYO SHIBAURA ELECTRIC CO28 citations92
US4383883AMay 17, 1983
Method for fabricating semiconductor device
TOKYO SHIBAURA ELECTRIC CO28 citations92
US4479297AOct 30, 1984
Method of fabricating three-dimensional semiconductor devices utilizing CeO2 and ion-implantation.
TOKYO SHIBAURA ELECTRIC CO42 citations91
US4698659AOct 6, 1987
Stacked complementary metal oxide semiconductor inverter
TOKYO SHIBAURA ELECTRIC CO20 citations74
US4506279AMar 19, 1985
Metal-oxide-semiconductor device with bilayered source and drain
TOKYO SHIBAURA ELECTRIC CO8 citations74
US4396930AAug 2, 1983
Compact MOSFET device with reduced plurality of wire contacts
TOKYO SHIBAURA ELECTRIC CO17 citations74
US4106049AAug 8, 1978
Semiconductor device
TOKYO SHIBAURA ELECTRIC CO11 citations74