P

Inventor

LAW KAM S

US58 patents
⚠️ This page may combine multiple inventors who share the name “LAW KAM S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

30 patents
US6825134B2Nov 30, 2004

Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow

APPLIED MATERIALS INC595 citations99
US6167834B1Jan 2, 2001

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC367 citations99
US5366585ANov 22, 1994

Method and apparatus for protection of conductive surfaces in a plasma processing reactor

APPLIED MATERIALS INC462 citations99
US5362526ANov 8, 1994

Plasma-enhanced CVD process using TEOS for depositing silicon oxide

APPLIED MATERIALS INC484 citations99
US5354715AOct 11, 1994

Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC132 citations99
US5000113AMar 19, 1991

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC1,100 citations99
US4892753AJan 9, 1990

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989

CVD of silicon oxide using TEOS decomposition and in-situ planarization process

APPLIED MATERIALS INC522 citations99
US4960488AOct 2, 1990

Reactor chamber self-cleaning process

APPLIED MATERIALS INC529 citations98
US6857387B1Feb 22, 2005

Multiple frequency plasma chamber with grounding capacitor at cathode

APPLIED MATERIALS INC92 citations96
US6500356B2Dec 31, 2002

Selectively etching silicon using fluorine without plasma

APPLIED MATERIALS INC67 citations96
USRE36623EMar 21, 2000

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC79 citations96
US5871811AFeb 16, 1999

Method for protecting against deposition on a selected region of a substrate

APPLIED MATERIALS INC69 citations96
US5755886AMay 26, 1998

Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing

APPLIED MATERIALS INC91 citations96
US5399387AMar 21, 1995

Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates

APPLIED MATERIALS INC127 citations96
US5204288AApr 20, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material

APPLIED MATERIALS INC67 citations96
US6338874B1Jan 15, 2002

Method for multilayer CVD processing in a single chamber

APPLIED MATERIALS INC59 citations94
US7029529B2Apr 18, 2006

Method and apparatus for metallization of large area substrates

APPLIED MATERIALS INC21 citations93
US6887776B2May 3, 2005

Methods to form metal lines using selective electrochemical deposition

APPLIED MATERIALS INC42 citations93
US5244841ASep 14, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

APPLIED MATERIALS INC39 citations93
US6902682B2Jun 7, 2005

Method and apparatus for electrostatically maintaining substrate flatness

APPLIED MATERIALS INC21 citations92
US6880561B2Apr 19, 2005

Fluorine process for cleaning semiconductor process chamber

APPLIED MATERIALS INC23 citations92
US6843258B2Jan 18, 2005

On-site cleaning gas generation for process chamber cleaning

APPLIED MATERIALS INC17 citations92
US6500265B1Dec 31, 2002

Apparatus for electrostatically maintaining subtrate flatness

APPLIED MATERIALS INC16 citations92
US6451390B1Sep 17, 2002

Deposition of TEOS oxide using pulsed RF plasma

APPLIED MATERIALS INC27 citations92
US6444277B1Sep 3, 2002

Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates

APPLIED MATERIALS INC50 citations91
US5441768AAug 15, 1995

Multi-step chemical vapor deposition method for thin film transistors

APPLIED MATERIALS INC28 citations90
US7056830B2Jun 6, 2006

Method for plasma etching a dielectric layer

APPLIED MATERIALS INC14 citations83
US6610354B2Aug 26, 2003

Plasma display panel with a low k dielectric layer

APPLIED MATERIALS INC6 citations73
US5112776AMay 12, 1992

Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

APPLIED MATERIALS INC10 citations72

APPLIED KOMATSU TECHNOLOGY INC

16 patents
US6182603B1Feb 6, 2001

Surface-treated shower head for use in a substrate processing chamber

APPLIED KOMATSU TECHNOLOGY INC692 citations99
US6055927AMay 2, 2000

Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology

APPLIED KOMATSU TECHNOLOGY INC129 citations99
US5788778AAug 4, 1998

Deposition chamber cleaning technique using a high power remote excitation source

APPLIED KOMATSU TECHNOLOGY INC281 citations99
US6235634B1May 22, 2001

Modular substrate processing system

APPLIED KOMATSU TECHNOLOGY INC420 citations98
US6355108B1Mar 12, 2002

Film deposition using a finger type shadow frame

APPLIED KOMATSU TECHNOLOGY INC90 citations97
US6024044AFeb 15, 2000

Dual frequency excitation of plasma for film deposition

APPLIED KOMATSU TECHNOLOGY INC184 citations97
US6647993B2Nov 18, 2003

Surface-treated shower head for use in a substrate processing chamber

APPLIED KOMATSU TECHNOLOGY INC48 citations96
US5607602AMar 4, 1997

High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas

APPLIED KOMATSU TECHNOLOGY INC63 citations94
US6177023B1Jan 23, 2001

Method and apparatus for electrostatically maintaining substrate flatness

APPLIED KOMATSU TECHNOLOGY INC19 citations92
US5895937AApr 20, 1999

Tapered dielectric etch in semiconductor devices

APPLIED KOMATSU TECHNOLOGY INC52 citations92
US5893757AApr 13, 1999

Tapered profile etching method

APPLIED KOMATSU TECHNOLOGY INC21 citations92
US5843277ADec 1, 1998

Dry-etch of indium and tin oxides with C2H5I gas

APPLIED KOMATSU TECHNOLOGY INC30 citations92
US5753133AMay 19, 1998

Method and apparatus for etching film layers on large substrates

APPLIED KOMATSU TECHNOLOGY INC36 citations92
US6468601B1Oct 22, 2002

Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology

APPLIED KOMATSU TECHNOLOGY INC14 citations84
US5895548AApr 20, 1999

High power microwave plasma applicator

APPLIED KOMATSU TECHNOLOGY INC18 citations84
US5567476AOct 22, 1996

Multi-step chemical vapor deposition method for thin film transistors

APPLIED KOMATSU TECHNOLOGY INC9 citations71

MAK CECILIA Y

2 patents

BLONIGAN WENDELL THOMAS

1 patent

APPLIED TECHNOLOGY INC

1 patent

Showing the top 50 of 58 patents by PatentIndex Score.