Inventor
FUKASE TADASHI
JP10 patents
⚠️ This page may combine multiple inventors who share the name “FUKASE TADASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
8 patentsUS5728595AMar 17, 1998
Method of fabricating a self-aligned contact hole for a semiconductor device
NEC CORP46 citations92
US5656529AAug 12, 1997
Method for manufacturing highly-integrated capacitor
NEC CORP22 citations92
US5384287AJan 24, 1995
Method of forming a semiconductor device having self-aligned contact holes
NEC CORP40 citations92
US5578524ANov 26, 1996
Fabrication process of a semiconductor device with a wiring structure
NEC CORP52 citations91
US6261897B1Jul 17, 2001
Method of manufacturing a semiconductor device
NEC CORP7 citations73
US6133115AOct 17, 2000
Formation of gate electrode
NEC CORP9 citations73
US5773342AJun 30, 1998
Method for forming a storage node in a semiconductor memory using ion implantation to form a smooth amorphous polycrystalline film
NEC CORP14 citations73
US5691222ANov 25, 1997
Method of manufacturing semiconductor integrated circuit device having a capacitor electrode
NEC CORP1 citations51
NEC ELECTRONICS CORP
2 patentsUS6841880B2Jan 11, 2005
Semiconductor device and method of fabricating semiconductor device with high CMP uniformity and resistance to loss that occurs in dicing
NEC ELECTRONICS CORP294 citations98
US6876064B2Apr 5, 2005
Semiconductor device having superior resistance to moisture
NEC ELECTRONICS CORP36 citations92