Inventor

SAITOH KEISHI

JP90 patents

Patents

50 patents

US4460670AJul 17, 1984

Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

CANON KK33 citations93

US4465750AAug 14, 1984

Photoconductive member with a -Si having two layer regions

CANON KK40 citations93

US4460669AJul 17, 1984

Photoconductive member with α-Si and C, U or D and dopant

CANON KK46 citations93

US5016565AMay 21, 1991

Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge

CANON KK22 citations92

US4953498ASep 4, 1990

Microwave plasma CVD apparatus having substrate shielding member

CANON KK27 citations92

US4600671AJul 15, 1986

Photoconductive member having light receiving layer of A-(Si-Ge) and N

CANON KK44 citations92

US4546008AOct 8, 1985

Method for forming a deposition film

CANON KK39 citations92

US5637358AJun 10, 1997

Microwave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheet

CANON KK27 citations89

US5061511AOct 29, 1991

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

CANON KK20 citations82

US4957772ASep 18, 1990

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

CANON KK20 citations82

US4897281AJan 30, 1990

Process for the formation of a functional deposited film by way of microwave plasma CVD method

CANON KK21 citations82

US4483911ANov 20, 1984

Photoconductive member with amorphous silicon-carbon surface layer

CANON KK20 citations82

US4452874AJun 5, 1984

Photoconductive member with multiple amorphous Si layers

CANON KK21 citations82

US4452875AJun 5, 1984

Amorphous photoconductive member with α-Si interlayers

CANON KK26 citations82

US5741615AApr 21, 1998

Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg

CANON KK14 citations74

US5573601ANov 12, 1996

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

CANON KK17 citations74

US5190838AMar 2, 1993

Electrophotographic image-forming member with photoconductive layer comprising non-single-crystal silicon carbide

CANON KK7 citations74

US4865883ASep 12, 1989

Method for forming a deposited film containing IN or SN

CANON KK8 citations74

US4844950AJul 4, 1989

Method for forming a metal film on a substrate

CANON KK16 citations74

US4834023AMay 30, 1989

Apparatus for forming deposited film

CANON KK14 citations74

US4822636AApr 18, 1989

Method for forming deposited film

CANON KK10 citations74

US4812328AMar 14, 1989

Method for forming deposited film

CANON KK12 citations74

US4804558AFeb 14, 1989

Process for producing electroluminescent devices

CANON KK14 citations74

US4795688AJan 3, 1989

Layered photoconductive member comprising amorphous silicon

CANON KK9 citations74

US4786574ANov 22, 1988

Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap

CANON KK13 citations74

US4705733ANov 10, 1987

Member having light receiving layer and substrate with overlapping subprojections

CANON KK13 citations74

US4705731ANov 10, 1987

Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer

CANON KK8 citations74

US4696881ASep 29, 1987

Member having light receiving layer with smoothly connected interfaces

CANON KK8 citations74

US4696884ASep 29, 1987

Member having photosensitive layer with series of smoothly continuous non-parallel interfaces

CANON KK10 citations74

US4650736AMar 17, 1987

Light receiving member having photosensitive layer with non-parallel interfaces

CANON KK16 citations74

US4598032AJul 1, 1986

Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

CANON KK10 citations74

US4595644AJun 17, 1986

Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen

CANON KK12 citations74

US4592982AJun 3, 1986

Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)

CANON KK11 citations74

US4592981AJun 3, 1986

Photoconductive member of amorphous germanium and silicon with carbon

CANON KK13 citations74

US4592983AJun 3, 1986

Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen

CANON KK12 citations74

US4587190AMay 6, 1986

Photoconductive member comprising amorphous silicon-germanium and nitrogen

CANON KK8 citations74

US4569894AFeb 11, 1986

Photoconductive member comprising germanium atoms

CANON KK9 citations74

US4567127AJan 28, 1986

Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer

CANON KK10 citations74

US4536459AAug 20, 1985

Photoconductive member having multiple amorphous layers

CANON KK12 citations74

US4532198AJul 30, 1985

Photoconductive member

CANON KK9 citations74

US4529679AJul 16, 1985

Photoconductive member

CANON KK18 citations74

US4522905AJun 11, 1985

Amorphous silicon photoconductive member with interface and rectifying layers

CANON KK12 citations74

US4501807AFeb 26, 1985

Photoconductive member having an amorphous silicon layer

CANON KK9 citations74

US4490454ADec 25, 1984

Photoconductive member comprising multiple amorphous layers

CANON KK11 citations74

US4486521ADec 4, 1984

Photoconductive member with doped and oxygen containing amorphous silicon layers

CANON KK13 citations74

Showing the top 50 of 90 patents by PatentIndex Score.

SAITOH KEISHI

Patents

Photoconductive member with α-Si and C, N or O and dopant

Deposited film forming apparatus

Photovoltaic device and a forming method thereof

Method of producing a semiconductor device

Device for forming deposited film

Apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process

Photoconductive member with a -Si having two layer regions

Photoconductive member with α-Si and C, U or D and dopant

Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge

Microwave plasma CVD apparatus having substrate shielding member

Photoconductive member having light receiving layer of A-(Si-Ge) and N

Method for forming a deposition film

Microwave plasma chemical vapor deposition process using a microwave window and movable, dielectric sheet

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method

Process for the formation of a functional deposited film by way of microwave plasma CVD method

Photoconductive member with amorphous silicon-carbon surface layer

Photoconductive member with multiple amorphous Si layers

Amorphous photoconductive member with α-Si interlayers

Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg

Pin amorphous silicon photovoltaic element with counter-doped intermediate layer

Electrophotographic image-forming member with photoconductive layer comprising non-single-crystal silicon carbide

Method for forming a deposited film containing IN or SN

Method for forming a metal film on a substrate

Apparatus for forming deposited film

Method for forming deposited film

Method for forming deposited film

Process for producing electroluminescent devices

Layered photoconductive member comprising amorphous silicon

Layered amorphous silicon containing photoconductive element having surface layer with specified optical band gap

Member having light receiving layer and substrate with overlapping subprojections

Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer

Member having light receiving layer with smoothly connected interfaces

Member having photosensitive layer with series of smoothly continuous non-parallel interfaces

Light receiving member having photosensitive layer with non-parallel interfaces

Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen

Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)

Photoconductive member of amorphous germanium and silicon with carbon

Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen

Photoconductive member comprising amorphous silicon-germanium and nitrogen

Photoconductive member comprising germanium atoms

Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer

Photoconductive member having multiple amorphous layers

Photoconductive member

Photoconductive member

Amorphous silicon photoconductive member with interface and rectifying layers

Photoconductive member having an amorphous silicon layer

Photoconductive member comprising multiple amorphous layers

Photoconductive member with doped and oxygen containing amorphous silicon layers