Inventor

HIROTA RYU

JP37 patents

⚠️ This page may combine multiple inventors who share the name “HIROTA RYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HIROTA RYU

SUMITOMO ELECTRIC INDUSTRIES

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

AlxInyGa1−x−yN mixture crystal substrate

Single crystal GaN substrate, method of growing same and method of producing same

Nitride semiconductor substrate and method of producing same

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate

Single crystal GaN substrate semiconductor device

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Fabrication method and fabrication apparatus of group III nitride crystal substance

Group III-V nitride semiconductor growth method and vapor phase growth apparatus

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

Nitride semiconductor substrate and method of producing same

Group III-V crystal and manufacturing method thereof

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Method for the heat treatment of II-VI semiconductors

Gallium nitride substrate

Semiconductor light-emitting device

Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device

Fabrication method and fabrication apparatus of group III nitride crystal substance

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Group III-V crystal

Method of manufacturing group-III nitride crystal

Method for the heat treatment of ZnSe crystal

Method for the heat treatment of ZnSe crystal

Group III nitride crystal and method of its growth

Gallium nitride substrate

Gallium nitride substrate

Gallium nitride substrate

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

NAKAHATA SEIJI

III-V compound crystal and semiconductor electronic circuit element

III-V compound crystal and semiconductor electronic circuit element

AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same

AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

SUMITO ELECTRIC IND LTD

A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

KASAI HITOSHI

Fabrication method and fabrication apparatus of group III nitride crystal substance

HIROTA RYU

III-nitride crystal substrate and III-nitride semiconductor device