Inventor
KOO JUNE-MO
KR36 patents
⚠️ This page may combine multiple inventors who share the name “KOO JUNE-MO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS7622761B2Nov 24, 2009
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD247 citations99
US7910909B2Mar 22, 2011
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD50 citations94
US8017991B2Sep 13, 2011
Non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US7700935B2Apr 20, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD43 citations93
US7560344B2Jul 14, 2009
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations93
US7598095B2Oct 6, 2009
Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD25 citations92
US9443892B2Sep 13, 2016
Image sensor and method of forming the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US8014068B2Sep 6, 2011
Wire grid polarizer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7948024B2May 24, 2011
Multi-layered, vertically stacked non-volatile memory device and method of fabrication
SAMSUNG ELECTRONICS CO LTD16 citations84
US7932551B2Apr 26, 2011
Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
SAMSUNG ELECTRONICS CO LTD11 citations84
US7910967B2Mar 22, 2011
Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7885115B2Feb 8, 2011
Non-volatile memory devices and methods of operating non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD10 citations84
US7796432B2Sep 14, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7829932B2Nov 9, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US7833890B2Nov 16, 2010
Semiconductor device having a pair of fins and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7986545B2Jul 26, 2011
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7947590B2May 24, 2011
Method of manufacturing a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7894265B2Feb 22, 2011
Non-volatile memory device and operation method of the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7813180B2Oct 12, 2010
Non-volatile memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7750393B2Jul 6, 2010
Non-volatile memory device with independent channel regions adjacent different sides of a common control gate
SAMSUNG ELECTRONICS CO LTD6 citations63
US7551491B2Jun 23, 2009
Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US7663136B2Feb 16, 2010
Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7745233B2Jun 29, 2010
Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7691441B2Apr 6, 2010
Method of forming carbon fibers using metal-organic chemical vapor deposition
SAMSUNG ELECTRONICS CO LTD1 citations52
US7585755B2Sep 8, 2009
Method of fabricating non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7459736B2Dec 2, 2008
Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7250649B2Jul 31, 2007
Capacitor of a memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US8958002B2Feb 17, 2015
Image sensors
SAMSUNG ELECTRONICS CO LTD0 citations51
US9209214B2Dec 8, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations40