Inventor
TRIYOSO DINA H
US31 patents
⚠️ This page may combine multiple inventors who share the name “TRIYOSO DINA H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
17 patentsUS7132360B2Nov 7, 2006
Method for treating a semiconductor surface to form a metal-containing layer
FREESCALE SEMICONDUCTOR INC590 citations97
US7091568B2Aug 15, 2006
Electronic device including dielectric layer, and a process for forming the electronic device
FREESCALE SEMICONDUCTOR INC59 citations95
US7015153B1Mar 21, 2006
Method for forming a layer using a purging gas in a semiconductor process
FREESCALE SEMICONDUCTOR INC56 citations95
US6979622B1Dec 27, 2005
Semiconductor transistor having structural elements of differing materials and method of formation
FREESCALE SEMICONDUCTOR INC21 citations92
US7297586B2Nov 20, 2007
Gate dielectric and metal gate integration
FREESCALE SEMICONDUCTOR INC13 citations84
US7230264B2Jun 12, 2007
Semiconductor transistor having structural elements of differing materials
FREESCALE SEMICONDUCTOR INC14 citations84
US7659156B2Feb 9, 2010
Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer
FREESCALE SEMICONDUCTOR INC5 citations72
US7071038B2Jul 4, 2006
Method of forming a semiconductor device having a dielectric layer with high dielectric constant
FREESCALE SEMICONDUCTOR INC10 citations71
US7618902B2Nov 17, 2009
Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer
FREESCALE SEMICONDUCTOR INC4 citations63
US7303983B2Dec 4, 2007
ALD gate electrode
FREESCALE SEMICONDUCTOR INC6 citations63
US6987063B2Jan 17, 2006
Method to reduce impurity elements during semiconductor film deposition
FREESCALE SEMICONDUCTOR INC3 citations63
US7776731B2Aug 17, 2010
Method of removing defects from a dielectric material in a semiconductor
FREESCALE SEMICONDUCTOR INC2 citations62
US8039386B1Oct 18, 2011
Method for forming a through silicon via (TSV)
FREESCALE SEMICONDUCTOR INC4 citations61
US6835671B2Dec 28, 2004
Method of making an integrated circuit using an EUV mask formed by atomic layer deposition
FREESCALE SEMICONDUCTOR INC6 citations61
US8030220B2Oct 4, 2011
Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer
FREESCALE SEMICONDUCTOR INC0 citations52
US7704821B2Apr 27, 2010
In-situ nitridation of high-k dielectrics
FREESCALE SEMICONDUCTOR INC0 citations52
US7911002B2Mar 22, 2011
Semiconductor device with selectively modulated gate work function
FREESCALE SEMICONDUCTOR INC1 citations51
GLOBALFOUNDRIES INC
8 patentsUS9209186B1Dec 8, 2015
Threshold voltage control for mixed-type non-planar semiconductor devices
GLOBALFOUNDRIES INC20 citations92
US9362284B2Jun 7, 2016
Threshold voltage control for mixed-type non-planar semiconductor devices
GLOBALFOUNDRIES INC7 citations84
US9269785B2Feb 23, 2016
Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device
GLOBALFOUNDRIES INC15 citations83
US9318315B2Apr 19, 2016
Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials
GLOBALFOUNDRIES INC13 citations79
US9583557B2Feb 28, 2017
Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime
GLOBALFOUNDRIES INC5 citations72
US9530833B2Dec 27, 2016
Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof
GLOBALFOUNDRIES INC3 citations72
US10236343B2Mar 19, 2019
Strain retention semiconductor member for channel SiGe layer of pFET
GLOBALFOUNDRIES INC0 citations51
US10050119B2Aug 14, 2018
Method for late differential SOI thinning for improved FDSOI performance and HCI optimization
GLOBALFOUNDRIES INC0 citations40
TOKYO ELECTRON LTD
4 patentsUS12406887B2Sep 2, 2025
Selective film formation using a self-assembled monolayer
TOKYO ELECTRON LTD0 citations61
US12211907B2Jan 28, 2025
Semiconductor manufacturing platform with in-situ electrical bias and methods thereof
TOKYO ELECTRON LTD0 citations61
US12550696B2Feb 10, 2026
Patterning with self-assembled monolayer
TOKYO ELECTRON LTD0 citations51
US12588434B2Mar 24, 2026
Methods for forming dielectric materials with selected polarization for semiconductor devices
TOKYO ELECTRON LTD0 citations50