P

Inventor

TRIYOSO DINA H

US31 patents
⚠️ This page may combine multiple inventors who share the name “TRIYOSO DINA H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

17 patents
US7132360B2Nov 7, 2006

Method for treating a semiconductor surface to form a metal-containing layer

FREESCALE SEMICONDUCTOR INC590 citations97
US7091568B2Aug 15, 2006

Electronic device including dielectric layer, and a process for forming the electronic device

FREESCALE SEMICONDUCTOR INC59 citations95
US7015153B1Mar 21, 2006

Method for forming a layer using a purging gas in a semiconductor process

FREESCALE SEMICONDUCTOR INC56 citations95
US6979622B1Dec 27, 2005

Semiconductor transistor having structural elements of differing materials and method of formation

FREESCALE SEMICONDUCTOR INC21 citations92
US7297586B2Nov 20, 2007

Gate dielectric and metal gate integration

FREESCALE SEMICONDUCTOR INC13 citations84
US7230264B2Jun 12, 2007

Semiconductor transistor having structural elements of differing materials

FREESCALE SEMICONDUCTOR INC14 citations84
US7659156B2Feb 9, 2010

Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer

FREESCALE SEMICONDUCTOR INC5 citations72
US7071038B2Jul 4, 2006

Method of forming a semiconductor device having a dielectric layer with high dielectric constant

FREESCALE SEMICONDUCTOR INC10 citations71
US7618902B2Nov 17, 2009

Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer

FREESCALE SEMICONDUCTOR INC4 citations63
US7303983B2Dec 4, 2007

ALD gate electrode

FREESCALE SEMICONDUCTOR INC6 citations63
US6987063B2Jan 17, 2006

Method to reduce impurity elements during semiconductor film deposition

FREESCALE SEMICONDUCTOR INC3 citations63
US7776731B2Aug 17, 2010

Method of removing defects from a dielectric material in a semiconductor

FREESCALE SEMICONDUCTOR INC2 citations62
US8039386B1Oct 18, 2011

Method for forming a through silicon via (TSV)

FREESCALE SEMICONDUCTOR INC4 citations61
US6835671B2Dec 28, 2004

Method of making an integrated circuit using an EUV mask formed by atomic layer deposition

FREESCALE SEMICONDUCTOR INC6 citations61
US8030220B2Oct 4, 2011

Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer

FREESCALE SEMICONDUCTOR INC0 citations52
US7704821B2Apr 27, 2010

In-situ nitridation of high-k dielectrics

FREESCALE SEMICONDUCTOR INC0 citations52
US7911002B2Mar 22, 2011

Semiconductor device with selectively modulated gate work function

FREESCALE SEMICONDUCTOR INC1 citations51

GLOBALFOUNDRIES INC

8 patents

TOKYO ELECTRON LTD

4 patents

SCHMIDBAUER SVEN

1 patent

TRIYOSO DINA H

1 patent