Inventor
TSENG HSING H
US10 patents
⚠️ This page may combine multiple inventors who share the name “TSENG HSING H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
8 patentsUS6902969B2Jun 7, 2005
Process for forming dual metal gate structures
FREESCALE SEMICONDUCTOR INC78 citations97
US7144825B2Dec 5, 2006
Multi-layer dielectric containing diffusion barrier material
FREESCALE SEMICONDUCTOR INC55 citations95
US7015153B1Mar 21, 2006
Method for forming a layer using a purging gas in a semiconductor process
FREESCALE SEMICONDUCTOR INC56 citations95
US6884685B2Apr 26, 2005
Radical oxidation and/or nitridation during metal oxide layer deposition process
FREESCALE SEMICONDUCTOR INC22 citations92
US7402472B2Jul 22, 2008
Method of making a nitrided gate dielectric
FREESCALE SEMICONDUCTOR INC9 citations83
US7235502B2Jun 26, 2007
Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors
FREESCALE SEMICONDUCTOR INC8 citations72
US7214590B2May 8, 2007
Method of forming an electronic device
FREESCALE SEMICONDUCTOR INC5 citations61
US7704821B2Apr 27, 2010
In-situ nitridation of high-k dielectrics
FREESCALE SEMICONDUCTOR INC0 citations52