Inventor

BALSEANU MIHAELA

US58 patents

⚠️ This page may combine multiple inventors who share the name “BALSEANU MIHAELA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BALSEANU MIHAELA

APPLIED MATERIALS INC

Methods and systems for forming at least one dielectric layer

Gapfill improvement with low etch rate dielectric liners

Integration process for fabricating stressed transistor structure

Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay

Method to fabricate thermally stable low K-FinFET spacer

Method of forming self-aligned via

Selective deposition of silicon nitride films for spacer applications

High temperature silicon oxide atomic layer deposition technology

Method to improve the step coverage and pattern loading for dielectric films

Method to increase the compressive stress of PECVD dielectric films

Boron derived materials deposition method

Method of forming magnetic tunneling junctions

Method to increase the compressive stress of PECVD silicon nitride films

Method of forming non-volatile memory having charge trap layer with compositional gradient

Method of forming self-aligned via

Methods and apparatus for selective dry etch

Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors

Accurate film thickness control in gap-fill technology

Cu/barrier interface enhancement

Seamless gapfill with dielectric ALD films

Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors

Method to improve the step coverage and pattern loading for dielectric films

Self-aligned double patterning with spatial atomic layer deposition

Methods and systems to modulate film stress

Method of forming self-aligned via

Self-aligned double patterning with spatial atomic layer deposition

Methods and systems to modulate film stress

High temperature silicon oxide atomic layer deposition technology

Method to improve the step coverage and pattern loading for dielectric films

Methods and apparatus for low temperature silicon nitride films

Low-k films

Selective deposition of SiCON by plasma ALD

Methods and apparatus for low temperature silicon nitride films

Method and apparatus for deposition of low-k films

Methods and precursors for selective deposition of metal films

Methods for depositing low K and low wet etch rate dielectric thin films

BALSEANU MIHAELA

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

Boron nitride and boron-nitride derived materials deposition method

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

Boron film interface engineering

Multilayered low k cap with conformal gap fill and UV stable compressive stress properties

Multilayered low k cap with conformal gap fill and UV stable compressive stress properties

Method of forming a non-volatile memory having a silicon nitride charge trap layer

NGUYEN VICTOR

Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films

Method for depositing boron-rich films for lithographic mask applications

PEALD of films comprising silicon nitride

HUH JEONG-UK

Method of depositing boron nitride and boron nitride-derived materials

CORNELL RES FOUNDATION INC

Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry

YE WEIFENG

Copper oxide removal techniques