Inventor

TAKEUCHI TETSUYA

JP73 patents

⚠️ This page may combine multiple inventors who share the name “TAKEUCHI TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAKEUCHI TETSUYA

AGILENT TECHNOLOGIES INC

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region

Method for obtaining high quality InGaAsN semiconductor devices

P-contact for a Group III-nitride semiconductor device and method of making same

Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same

Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice

Asymmetric InGaAsN vertical cavity surface emitting lasers

Nitride semiconductor device

System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom

Efficiency GaN-based light emitting devices

System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element

Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells

CANON KK

Process for producing surface emitting laser, process for producing surface emitting laser array, and optical apparatus including surface emitting laser array produced by the process

Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser

Surface-emitting laser and optical apparatus formed by using surface-emitting laser

Vertical cavity surface emitting laser and image forming apparatus using the vertical cavity surface emitting laser

Semiconductor laser apparatus

Light-emitting element array and image forming apparatus

Light-emitting element array and image forming apparatus

Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array

Red surface emitting laser element, image forming device, and image display apparatus

LUMILEDS LIGHTING LLC

Nitride semiconductor device with reduced polarization fields

Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency

Semiconductor substrate and method for making the same

Epitaxial aluminium-gallium nitride semiconductor substrate

Light emitting diodes with graded composition active regions

Nucleation layer for improved light extraction from light emitting devices

UNIV MEIJO

Nitride semiconductor light-emitting device

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

Nitride semiconductor multilayer film reflector and light-emitting device using the same

DENSO CORP

Cooling system for cooling hot object in container

Heat exchanger

Cooling device and method of manufacturing the same

AMANO HIROSHI

Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer

Gallium nitride base semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Coin-shaped battery and method for producing the same

Flat battery

TAKEUCHI TETSUYA

Light emitting element array and image forming apparatus

Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array

TOYODA GOSEI KK

Semiconductor device and method for producing semiconductor device

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

FUJITSU LTD

Plasma treating method using hydrogen gas

PHILIPS LUMILEDS LIGHTING CO

Light emitting diodes with graded composition active regions

TOKAI RUBBER IND LTD

High damping material composition

KOMORI PRINTING MACH

Paper feed apparatus for sheet-fed press

ARIMA TERUO

Wound treatment agent

STANLEY ELECTRIC CO LTD

Vertical cavity light-emitting element

SOKKISHA

Verticality detecting apparatus for plumbing columns

BOUR DAVID P

Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region