Inventor

HIGUCHI RANDALL

US5 patents

⚠️ This page may combine multiple inventors who share the name “HIGUCHI RANDALL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TONG JINHONG

2 patents

US8802492B2Aug 12, 2014

Method for forming resistive switching memory elements

TONG JINHONG3 citations60

US8741698B2Jun 3, 2014

Atomic layer deposition of zirconium oxide for forming resistive-switching materials

TONG JINHONG1 citations50

HONG ZHENDONG

1 patent

US8846443B2Sep 30, 2014

Atomic layer deposition of metal oxides for memory applications

HONG ZHENDONG1 citations55

INTERMOLECULAR INC

1 patent

US9543516B2Jan 10, 2017

Method for forming a doped metal oxide for use in resistive switching memory elements

INTERMOLECULAR INC0 citations51

HIGUCHI RANDALL

1 patent

US8791445B2Jul 29, 2014

Interfacial oxide used as switching layer in a nonvolatile resistive memory element

HIGUCHI RANDALL0 citations44