Inventor
KOMORI SHIGEKI
JP100 patents
⚠️ This page may combine multiple inventors who share the name “KOMORI SHIGEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR ENERGY LAB
20 patentsUS8368066B2Feb 5, 2013
Display device
SEMICONDUCTOR ENERGY LAB68 citations98
US7989815B2Aug 2, 2011
Display device
SEMICONDUCTOR ENERGY LAB64 citations98
US7768009B2Aug 3, 2010
Display device and manufacturing method of the same
SEMICONDUCTOR ENERGY LAB60 citations98
US7579220B2Aug 25, 2009
Semiconductor device manufacturing method
SEMICONDUCTOR ENERGY LAB53 citations98
US9082688B2Jul 14, 2015
Display device
SEMICONDUCTOR ENERGY LAB15 citations93
US8049221B2Nov 1, 2011
Liquid crystal display device
SEMICONDUCTOR ENERGY LAB38 citations93
US7608490B2Oct 27, 2009
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB30 citations93
US10032796B2Jul 24, 2018
Display device
SEMICONDUCTOR ENERGY LAB12 citations92
US9366894B2Jun 14, 2016
Display device
SEMICONDUCTOR ENERGY LAB10 citations92
US9097925B2Aug 4, 2015
Display device
SEMICONDUCTOR ENERGY LAB11 citations92
US10559599B2Feb 11, 2020
Display device
SEMICONDUCTOR ENERGY LAB8 citations84
US10559598B2Feb 11, 2020
Display device
SEMICONDUCTOR ENERGY LAB7 citations84
US10367006B2Jul 30, 2019
Display Device
SEMICONDUCTOR ENERGY LAB4 citations84
US9915843B2Mar 13, 2018
Display device with pixel including capacitor
SEMICONDUCTOR ENERGY LAB7 citations84
US9703157B2Jul 11, 2017
Display device
SEMICONDUCTOR ENERGY LAB4 citations84
US9570470B2Feb 14, 2017
Display device
SEMICONDUCTOR ENERGY LAB5 citations84
US9130067B2Sep 8, 2015
Display device
SEMICONDUCTOR ENERGY LAB7 citations84
US8674371B2Mar 18, 2014
Display device
SEMICONDUCTOR ENERGY LAB11 citations84
US7993991B2Aug 9, 2011
Manufacturing method of thin film transistor and manufacturing method of display device
SEMICONDUCTOR ENERGY LAB12 citations84
US7985605B2Jul 26, 2011
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB12 citations84
MITSUBISHI ELECTRIC CORP
15 patentsUS5208473AMay 4, 1993
Lightly doped MISFET with reduced latchup and punchthrough
MITSUBISHI ELECTRIC CORP126 citations98
US5478761ADec 26, 1995
Method of producing semiconductor device having first and second type field effect transistors
MITSUBISHI ELECTRIC CORP63 citations96
US5412237AMay 2, 1995
Semiconductor device with improved element isolation and operation rate
MITSUBISHI ELECTRIC CORP48 citations96
US5296401AMar 22, 1994
MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof
MITSUBISHI ELECTRIC CORP79 citations96
US5141882AAug 25, 1992
Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor
MITSUBISHI ELECTRIC CORP60 citations96
US5138420AAug 11, 1992
Semiconductor device having first and second type field effect transistors separated by a barrier
MITSUBISHI ELECTRIC CORP73 citations96
US6452246B1Sep 17, 2002
Semiconductor device having an improved isolation structure, and method of manufacturing the semiconductor device
MITSUBISHI ELECTRIC CORP22 citations93
US5457339AOct 10, 1995
Semiconductor device for element isolation and manufacturing method thereof
MITSUBISHI ELECTRIC CORP32 citations93
US5455437AOct 3, 1995
Semiconductor device having crystalline defect isolation regions
MITSUBISHI ELECTRIC CORP29 citations93
US5293060AMar 8, 1994
Semiconductor device with diffusion well isolation
MITSUBISHI ELECTRIC CORP28 citations93
US5045901ASep 3, 1991
Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions
MITSUBISHI ELECTRIC CORP22 citations93
US5019520AMay 28, 1991
Method for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthrough
MITSUBISHI ELECTRIC CORP40 citations93
US4978629ADec 18, 1990
Method of making a metal-oxide-semiconductor device having shallow source and drain diffused regions
MITSUBISHI ELECTRIC CORP26 citations93
US5446305AAug 29, 1995
Semiconductor device with double structured well
MITSUBISHI ELECTRIC CORP20 citations92
US6667526B2Dec 23, 2003
Tunneling magnetoresistive storage unit
MITSUBISHI ELECTRIC CORP15 citations84
YAMAZAKI SHUNPEI
10 patentsUS8304765B2Nov 6, 2012
Display device
YAMAZAKI SHUNPEI153 citations99
US8389988B2Mar 5, 2013
Display device
YAMAZAKI SHUNPEI36 citations98
US9048320B2Jun 2, 2015
Display device including oxide semiconductor layer
YAMAZAKI SHUNPEI21 citations93
US8941114B2Jan 27, 2015
Display device including protective circuit
YAMAZAKI SHUNPEI19 citations93
US9478597B2Oct 25, 2016
Semiconductor device
YAMAZAKI SHUNPEI17 citations92
US8427595B2Apr 23, 2013
Display device with pixel portion and common connection portion having oxide semiconductor layers
YAMAZAKI SHUNPEI31 citations92
US9343517B2May 17, 2016
Display device
YAMAZAKI SHUNPEI11 citations84
US9196633B2Nov 24, 2015
Display device
YAMAZAKI SHUNPEI12 citations84
US8501555B2Aug 6, 2013
Semiconductor device and manufacturing method thereof
YAMAZAKI SHUNPEI8 citations84
US8334540B2Dec 18, 2012
Display device
YAMAZAKI SHUNPEI10 citations84
NIPPON PETROCHEMICALS CO LTD
2 patentsKOBAYASHI SATOSHI
2 patentsSASAGAWA SHINYA
1 patentShowing the top 50 of 100 patents by PatentIndex Score.