Inventor
SONG HO-SUNG
KR22 patents
Patents
22 patentsUS6121677ASep 19, 2000
Reduced size integrated circuits and methods using test pads located in scribe regions of integrated circuits wafers
SAMSUNG ELECTRONICS CO LTD76 citations96
US5959906ASep 28, 1999
Semiconductor memory device with a fully accessible redundant memory cell array
SAMSUNG ELECTRONICS CO LTD25 citations92
US6756856B2Jun 29, 2004
Clock generation circuits and integrated circuit memory devices for controlling a clock period based on temperature and methods for using the same
SAMSUNG ELECTRONICS CO LTD53 citations89
US6239642B1May 29, 2001
Integrated circuits with variable signal line loading circuits and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD16 citations84
US6366155B1Apr 2, 2002
Reference voltage generators and methods including supplementary current generation, and integrated circuits including the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US10008247B2Jun 26, 2018
Memory device for performing multi-core access to bank groups
SAMSUNG ELECTRONICS CO LTD2 citations73
US9396771B2Jul 19, 2016
Memory device for performing multi-core access to bank groups
SAMSUNG ELECTRONICS CO LTD3 citations73
US6310796B1Oct 30, 2001
Dynamic random access memory device and μBGA package using multiple reference voltage pads
SAMSUNG ELECTRONICS CO LTD10 citations73
US9824946B2Nov 21, 2017
Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level
SAMSUNG ELECTRONICS CO LTD4 citations72
US9264039B2Feb 16, 2016
Circuit and method for on-die termination, and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US7319634B2Jan 15, 2008
Address converter semiconductor device and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD8 citations72
US6577554B2Jun 10, 2003
Semiconductor memory device for providing margin of data setup time and data hold time of data terminal
SAMSUNG ELECTRONICS CO LTD12 citations71
US7027339B2Apr 11, 2006
Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations62
US6538337B2Mar 25, 2003
Ball grid array package for providing constant internal voltage via a PCB substrate routing configuration
SAMSUNG ELECTRONICS CO LTD2 citations62
US6178109B1Jan 23, 2001
Integrated circuit memory devices having reduced susceptibility to reference voltage signal noise
SAMSUNG ELECTRONICS CO LTD4 citations62
US7599234B2Oct 6, 2009
Semiconductor memory devices having signal delay controller and methods performed therein
SAMSUNG ELECTRONICS CO LTD2 citations61
US9461656B2Oct 4, 2016
Injection-locked phase locked loop circuits using delay locked loops
SAMSUNG ELECTRONICS CO LTD2 citations59
US6906963B2Jun 14, 2005
Semiconductor memory device having output driver for high frequency operation
SAMSUNG ELECTRONICS CO LTD0 citations52
US9053774B2Jun 9, 2015
Duty cycle corrector and systems including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US8027219B2Sep 27, 2011
Semiconductor memory devices having signal delay controller and methods performed therein
SAMSUNG ELECTRONICS CO LTD0 citations51
US10163741B2Dec 25, 2018
Scribe lane structure in which pad including via hole is arranged on sawing line
SAMSUNG ELECTRONICS CO LTD1 citations48
US6115311ASep 5, 2000
Semiconductor memory device capable of selecting a plurality of refresh cycle modes
SAMSUNG ELECTRONICS CO LTD1 citations46