Inventor
SHIN JINHYUN
KR18 patents
⚠️ This page may combine multiple inventors who share the name “SHIN JINHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS9601577B1Mar 21, 2017
Three-dimensionally integrated circuit devices including oxidation suppression layers
SAMSUNG ELECTRONICS CO LTD69 citations98
US9659958B2May 23, 2017
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations91
US9911745B2Mar 6, 2018
Three-dimensionally integrated circuit devices including oxidation suppression layers
SAMSUNG ELECTRONICS CO LTD14 citations84
US9379123B2Jun 28, 2016
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US8975684B2Mar 10, 2015
Methods of forming non-volatile memory devices having air gaps
SAMSUNG ELECTRONICS CO LTD8 citations82
US8969215B2Mar 3, 2015
Methods of fabricating semiconductor devices using double patterning technology
SAMSUNG ELECTRONICS CO LTD5 citations73
US9378979B2Jun 28, 2016
Methods of fabricating semiconductor devices and devices fabricated thereby
SAMSUNG ELECTRONICS CO LTD1 citations52
US10153295B2Dec 11, 2018
Nonvolatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9704878B2Jul 11, 2017
Nonvolatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD1 citations51
US10128266B2Nov 13, 2018
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations50
US9773795B2Sep 26, 2017
Semiconductor devices having airgaps and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US9711531B2Jul 18, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations49
US9379115B2Jun 28, 2016
Semiconductor device having a resistor and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations47