Inventor
JEW THOMAS
US22 patents
⚠️ This page may combine multiple inventors who share the name “JEW THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
13 patentsUS7616509B2Nov 10, 2009
Dynamic voltage adjustment for memory
FREESCALE SEMICONDUCTOR INC49 citations92
US9767875B2Sep 19, 2017
Capacitive sensing and reference voltage scheme for random access memory
FREESCALE SEMICONDUCTOR INC10 citations84
US9508397B1Nov 29, 2016
Non-volatile memory (NVM) with endurance control
FREESCALE SEMICONDUCTOR INC8 citations84
US9349426B1May 24, 2016
Non-volatile random access memory (NVRAM)
FREESCALE SEMICONDUCTOR INC7 citations84
US7483327B2Jan 27, 2009
Apparatus and method for adjusting an operating parameter of an integrated circuit
FREESCALE SEMICONDUCTOR INC12 citations84
US7428172B2Sep 23, 2008
Concurrent programming and program verification of floating gate transistor
FREESCALE SEMICONDUCTOR INC11 citations84
US7245527B2Jul 17, 2007
Nonvolatile memory system using magneto-resistive random access memory (MRAM)
FREESCALE SEMICONDUCTOR INC13 citations79
US7269090B2Sep 11, 2007
Memory access with consecutive addresses corresponding to different rows
FREESCALE SEMICONDUCTOR INC9 citations74
US10007588B2Jun 26, 2018
Full address coverage during memory array built-in self-test with minimum transitions
FREESCALE SEMICONDUCTOR INC3 citations68
US7668018B2Feb 23, 2010
Electronic device including a nonvolatile memory array and methods of using the same
FREESCALE SEMICONDUCTOR INC2 citations63
US7599236B2Oct 6, 2009
In-circuit Vt distribution bit counter for non-volatile memory devices
FREESCALE SEMICONDUCTOR INC3 citations57
US9558800B2Jan 31, 2017
Non-volatile random access memory (NVRAM)
FREESCALE SEMICONDUCTOR INC0 citations42
US9651617B2May 16, 2017
Full address coverage during memory array built-in self test with minimum transitions
FREESCALE SEMICONDUCTOR INC0 citations38
MOTOROLA INC
5 patentsUS5991201ANov 23, 1999
Non-volatile memory with over-program protection and method therefor
MOTOROLA INC85 citations95
US6226200B1May 1, 2001
In-circuit memory array bit cell threshold voltage distribution measurement
MOTOROLA INC84 citations91
US6101130AAug 8, 2000
Semiconductor device memory cell and method for selectively erasing the same
MOTOROLA INC2 citations61
US6008677ADec 28, 1999
Voltage recovery circuit and method therefor
MOTOROLA INC4 citations56
US5737566AApr 7, 1998
Data processing system having a memory with both a high speed operating mode and a low power operating mode and method therefor
MOTOROLA INC6 citations50