Inventor
Zhang Ruo Fang
CN6 patents
Patents
6 patentsUS10714493B2Jul 14, 2020
Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD3 citations71
US11805643B2Oct 31, 2023
Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector
YANGTZE MEMORY TECH CO LTD0 citations61
US11502094B2Nov 15, 2022
Multi-level vertical memory device including inter-level channel connector
YANGTZE MEMORY TECH CO LTD0 citations61
US12446217B2Oct 14, 2025
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US11737263B2Aug 22, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US11145667B2Oct 12, 2021
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60