P

Inventor

WANG ENBO

CN19 patents
⚠️ This page may combine multiple inventors who share the name “WANG ENBO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

14 patents
US10658378B2May 19, 2020

Through array contact (TAC) for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD9 citations82
US10937806B2Mar 2, 2021

Through array contact (TAC) for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD2 citations71
US10714493B2Jul 14, 2020

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD3 citations71
US10892280B2Jan 12, 2021

Inter-deck plug in three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD3 citations70
US10741578B2Aug 11, 2020

Inter-deck plug in three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD3 citations70
US11805643B2Oct 31, 2023

Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector

YANGTZE MEMORY TECH CO LTD0 citations61
US11502094B2Nov 15, 2022

Multi-level vertical memory device including inter-level channel connector

YANGTZE MEMORY TECH CO LTD0 citations61
US10679985B2Jun 9, 2020

Three-dimensional memory device having semiconductor plug formed using backside substrate thinning

YANGTZE MEMORY TECH CO LTD1 citations61
US10651193B2May 12, 2020

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD1 citations61
US12446217B2Oct 14, 2025

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US11737263B2Aug 22, 2023

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US11145667B2Oct 12, 2021

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US11716843B2Aug 1, 2023

Method for forming contact structures in three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations47
US10665500B1May 26, 2020

Methods of semiconductor device fabrication

YANGTZE MEMORY TECH CO LTD0 citations40

HUAWEI TECH CO LTD

5 patents