Inventor
YANG HAOHAO
CN26 patents
Patents
26 patentsUS10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD7 citations83
US11963356B2Apr 16, 2024
Three-dimensional memory device without gate line slits and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11257831B2Feb 22, 2022
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11251195B2Feb 15, 2022
Three-dimensional memory device without gate line slits and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11183512B2Nov 23, 2021
Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations73
US11114458B2Sep 7, 2021
Three-dimensional memory device with support structures in gate line slits and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11094712B2Aug 17, 2021
Three-dimensional memory device with support structures in slit structures and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11145666B2Oct 12, 2021
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10714493B2Jul 14, 2020
Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD3 citations71
US10892280B2Jan 12, 2021
Inter-deck plug in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD3 citations70
US10741578B2Aug 11, 2020
Inter-deck plug in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD3 citations70
US12137558B2Nov 5, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12035523B2Jul 9, 2024
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12010838B2Jun 11, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11765897B2Sep 19, 2023
Three-dimensional memory device without gate line slits and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11716850B2Aug 1, 2023
Three-dimensional memory device with support structures in gate line slits and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11101276B2Aug 24, 2021
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11805643B2Oct 31, 2023
Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector
YANGTZE MEMORY TECH CO LTD0 citations61
US11502094B2Nov 15, 2022
Multi-level vertical memory device including inter-level channel connector
YANGTZE MEMORY TECH CO LTD0 citations61
US12446217B2Oct 14, 2025
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US11737263B2Aug 22, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US11145667B2Oct 12, 2021
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US10892274B2Jan 12, 2021
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US11329061B2May 10, 2022
Method for improving channel hole uniformity of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations49
US10665500B1May 26, 2020
Methods of semiconductor device fabrication
YANGTZE MEMORY TECH CO LTD0 citations40