Inventor
LAO CHUNG-REN
TW20 patents
⚠️ This page may combine multiple inventors who share the name “LAO CHUNG-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
16 patentsUS9343572B1May 17, 2016
High-voltage semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP10 citations81
US11637139B2Apr 25, 2023
Semiconductor device including light-collimating layer and biometric device using the same
VANGUARD INT SEMICONDUCT CORP2 citations70
US11374096B1Jun 28, 2022
High voltage semiconductor device
VANGUARD INT SEMICONDUCT CORP2 citations65
US12513924B2Dec 30, 2025
Semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations61
US11335717B2May 17, 2022
Semiconductor device including light-collimating layer
VANGUARD INT SEMICONDUCT CORP0 citations60
US11538840B2Dec 27, 2022
Color filters disposed in holes of a light collimator, manufacturing method of the same and biometric identification apparatus using the same
VANGUARD INT SEMICONDUCT CORP0 citations59
US9978861B2May 22, 2018
Semiconductor device having gate in trenches
VANGUARD INT SEMICONDUCT CORP1 citations51
US10395085B2Aug 27, 2019
Semiconductor device and fingerprint sensor device thereof
VANGUARD INT SEMICONDUCT CORP0 citations50
US9818861B2Nov 14, 2017
Semiconductor device and method for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations50
US11217708B2Jan 4, 2022
Optical sensor and method for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations49
US10572070B2Feb 25, 2020
Optical devices and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations49
US9224862B2Dec 29, 2015
High voltage semiconductor device and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP1 citations48
US9525020B2Dec 20, 2016
Semiconductor device and method for forming the same
VANGUARD INT SEMICONDUCT CORP1 citations47
US12532537B2Jan 20, 2026
Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations44
US12206029B2Jan 21, 2025
Diode structure and semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations42
US10629726B2Apr 21, 2020
High-voltage semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP0 citations39