Inventor
POON STEPHEN S
US26 patents
⚠️ This page may combine multiple inventors who share the name “POON STEPHEN S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLE INC
13 patentsUS10312309B2Jun 4, 2019
Power and data routing structures for organic light-emitting diode displays
APPLE INC20 citations94
US9939978B2Apr 10, 2018
Touch sensitive displays
APPLE INC15 citations93
US9614183B2Apr 4, 2017
Organic light-emitting diode displays with crack detection and crack propagation prevention circuitry
APPLE INC22 citations92
US11257883B2Feb 22, 2022
Power and data routing structures for organic light-emitting diode displays
APPLE INC5 citations84
US10629664B2Apr 21, 2020
Power and data routing structures for organic light-emitting diode displays
APPLE INC8 citations84
US9818976B2Nov 14, 2017
Encapsulation layers with improved reliability
APPLE INC9 citations80
US11665933B2May 30, 2023
Power and data routing structures for organic light-emitting diode displays
APPLE INC1 citations73
US9535544B2Jan 3, 2017
Reducing touch pixel coupling
APPLE INC2 citations71
US12518700B2Jan 6, 2026
Power and data routing structures for organic light-emitting diode displays
APPLE INC0 citations62
US12156439B2Nov 26, 2024
Power and data routing structures for organic light-emitting diode displays
APPLE INC0 citations62
US11342395B2May 24, 2022
Power and data routing structures for organic light-emitting diode displays
APPLE INC0 citations62
US11101337B2Aug 24, 2021
Power and data routing structures for organic light-emitting diode displays
APPLE INC0 citations62
US9329738B2May 3, 2016
Determination and reduction of parasitic capacitance variation due to display noise
APPLE INC0 citations52
MOTOROLA INC
11 patentsUS4753898AJun 28, 1988
LDD CMOS process
MOTOROLA INC311 citations99
US5552332ASep 3, 1996
Process for fabricating a MOSFET device having reduced reverse short channel effects
MOTOROLA INC160 citations98
US5328553AJul 12, 1994
Method for fabricating a semiconductor device having a planar surface
MOTOROLA INC121 citations98
US5436488AJul 25, 1995
Trench isolator structure in an integrated circuit
MOTOROLA INC60 citations96
US5387540AFeb 7, 1995
Method of forming trench isolation structure in an integrated circuit
MOTOROLA INC105 citations96
US5324690AJun 28, 1994
Semiconductor device having a ternary boron nitride film and a method for forming the same
MOTOROLA INC82 citations96
US5064683ANov 12, 1991
Method for polish planarizing a semiconductor substrate by using a boron nitride polish stop
MOTOROLA INC103 citations96
US4978626ADec 18, 1990
LDD transistor process having doping sensitive endpoint etching
MOTOROLA INC83 citations96
US4829024AMay 9, 1989
Method of forming layered polysilicon filled contact by doping sensitive endpoint etching
MOTOROLA INC84 citations95
US5254873AOct 19, 1993
Trench structure having a germanium silicate region
MOTOROLA INC42 citations92
US5190889AMar 2, 1993
Method of forming trench isolation structure with germanium silicate filling
MOTOROLA INC45 citations92