Inventor
SMYTHE III JOHN A
US37 patents
⚠️ This page may combine multiple inventors who share the name “SMYTHE III JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
28 patentsUS7521378B2Apr 21, 2009
Low temperature process for polysilazane oxidation/densification
MICRON TECHNOLOGY INC173 citations99
US7514366B2Apr 7, 2009
Methods for forming shallow trench isolation
MICRON TECHNOLOGY INC42 citations96
US7112513B2Sep 26, 2006
Sub-micron space liner and densification process
MICRON TECHNOLOGY INC37 citations96
US7557420B2Jul 7, 2009
Low temperature process for polysilazane oxidation/densification
MICRON TECHNOLOGY INC25 citations92
US7271463B2Sep 18, 2007
Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
MICRON TECHNOLOGY INC27 citations92
US7271464B2Sep 18, 2007
Liner for shallow trench isolation
MICRON TECHNOLOGY INC15 citations92
US11227864B1Jan 18, 2022
Storage node after three-node access device formation for vertical three dimensional (3D) memory
MICRON TECHNOLOGY INC12 citations85
US7919829B2Apr 5, 2011
Liner for shallow trench isolation
MICRON TECHNOLOGY INC9 citations84
US11769795B2Sep 26, 2023
Channel conduction in semiconductor devices
MICRON TECHNOLOGY INC2 citations73
US11476251B2Oct 18, 2022
Channel integration in a three-node access device for vertical three dimensional (3D) memory
MICRON TECHNOLOGY INC3 citations73
US11329051B2May 10, 2022
Gate dielectric repair on three-node access device formation for vertical three-dimensional (3D) memory
MICRON TECHNOLOGY INC2 citations73
US11289491B1Mar 29, 2022
Epitaxtal single crystalline silicon growth for a horizontal access device
MICRON TECHNOLOGY INC5 citations73
US11239117B1Feb 1, 2022
Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory
MICRON TECHNOLOGY INC4 citations73
US7479440B2Jan 20, 2009
Method of forming an isolation structure that includes forming a silicon layer at a base of the recess
MICRON TECHNOLOGY INC4 citations73
US9634250B2Apr 25, 2017
Resistive RAM devices and methods
MICRON TECHNOLOGY INC3 citations72
US9514976B2Dec 6, 2016
Trench isolation implantation
MICRON TECHNOLOGY INC2 citations63
US9343677B2May 17, 2016
GCIB-treated resistive device
MICRON TECHNOLOGY INC2 citations63
US9087989B2Jul 21, 2015
GCIB-treated resistive device
MICRON TECHNOLOGY INC2 citations63
US8617959B2Dec 31, 2013
Resistive memory and methods of processing resistive memory
MICRON TECHNOLOGY INC1 citations63
US7659181B2Feb 9, 2010
Sub-micron space liner and filler process
MICRON TECHNOLOGY INC4 citations63
US12279410B2Apr 15, 2025
Epitaxial single crystalline silicon growth for a horizontal access device
MICRON TECHNOLOGY INC0 citations62
US11171206B2Nov 9, 2021
Channel conduction in semiconductor devices
MICRON TECHNOLOGY INC0 citations62
US10964536B2Mar 30, 2021
Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio
MICRON TECHNOLOGY INC0 citations62
US9142770B2Sep 22, 2015
Resistive RAM devices and methods
MICRON TECHNOLOGY INC1 citations62
US7501691B2Mar 10, 2009
Trench insulation structures including an oxide liner and oxidation barrier
MICRON TECHNOLOGY INC2 citations62
US11081364B2Aug 3, 2021
Reduction of crystal growth resulting from annealing a conductive material
MICRON TECHNOLOGY INC0 citations51
US9419219B2Aug 16, 2016
Resistive RAM devices and methods
MICRON TECHNOLOGY INC0 citations51
US12324244B2Jun 3, 2025
Epitaxial single crystalline silicon growth for memory arrays
MICRON TECHNOLOGY INC0 citations50