Inventor
YAMAGAMI ATSUSHI
JP16 patents
Patents
16 patentsUS5534070AJul 9, 1996
Plasma CVD process using a very-high-frequency and plasma CVD apparatus
CANON KK314 citations99
US5510011AApr 23, 1996
Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
CANON KK130 citations98
US6065425AMay 23, 2000
Plasma process apparatus and plasma process method
CANON KK129 citations97
US5728278AMar 17, 1998
Plasma processing apparatus
CANON KK73 citations96
US5607560AMar 4, 1997
Diamond crystal forming method
CANON KK58 citations96
US6152071ANov 28, 2000
High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
CANON KK85 citations95
US6558507B1May 6, 2003
Plasma processing apparatus
CANON KK16 citations92
US6145469ANov 14, 2000
Plasma processing apparatus and processing method
CANON KK32 citations92
US5970907AOct 26, 1999
Plasma processing apparatus
CANON KK18 citations92
US5540781AJul 30, 1996
Plasma CVD process using a very-high-frequency and plasma CVD apparatus
CANON KK46 citations92
US5316645AMay 31, 1994
Plasma processing apparatus
CANON KK39 citations92
US5178905AJan 12, 1993
Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state
CANON KK41 citations92
US6435130B1Aug 20, 2002
Plasma CVD apparatus and plasma processing method
CANON KK18 citations84
US5846612ADec 8, 1998
Process for forming high-quality deposited film utilizing plasma CVD
CANON KK12 citations74
US6076481AJun 20, 2000
Plasma processing apparatus and plasma processing method
CANON KK4 citations62
US6291029B1Sep 18, 2001
Plasma processing method
CANON KK0 citations52