Inventor
YONEDA MASAHIRO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “YONEDA MASAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
16 patentsUS4465529AAug 14, 1984
Method of producing semiconductor device
MITSUBISHI ELECTRIC CORP81 citations96
US4430547AFeb 7, 1984
Cleaning device for a plasma etching system
MITSUBISHI ELECTRIC CORP63 citations96
US5277740AJan 11, 1994
Apparatus and method for forming a fine pattern
MITSUBISHI ELECTRIC CORP20 citations92
US5258266ANov 2, 1993
Method of forming minute patterns using positive chemically amplifying type resist
MITSUBISHI ELECTRIC CORP33 citations92
US5175118ADec 29, 1992
Multiple layer electrode structure for semiconductor device and method of manufacturing thereof
MITSUBISHI ELECTRIC CORP50 citations92
US5079617AJan 7, 1992
Multiple layer electrode structure for semiconductor device and method of manufacturing thereof
MITSUBISHI ELECTRIC CORP26 citations92
US5177574AJan 5, 1993
Semiconductor memory device having a stacked type capacitor and manufacturing method therefor
MITSUBISHI ELECTRIC CORP17 citations82
US5158861AOct 27, 1992
Method of forming minute patterns using chemically amplifying type resist
MITSUBISHI ELECTRIC CORP21 citations81
US4956692ASep 11, 1990
Semiconductor device having an isolation oxide film
MITSUBISHI ELECTRIC CORP11 citations74
US5292401AMar 8, 1994
Method of forming a fine pattern
MITSUBISHI ELECTRIC CORP5 citations73
US5285092AFeb 8, 1994
Semiconductor memory device having a stacked type capacitor and manufacturing method therefor
MITSUBISHI ELECTRIC CORP9 citations73
US5228940AJul 20, 1993
Fine pattern forming apparatus
MITSUBISHI ELECTRIC CORP5 citations73
US4929990AMay 29, 1990
Semiconductor memory device
MITSUBISHI ELECTRIC CORP7 citations73
US5219781AJun 15, 1993
Method for manufacturing semiconductor memory device having a stacked type capacitor
MITSUBISHI ELECTRIC CORP4 citations62
US4984199AJan 8, 1991
Semiconductor memory cells having common contact hole
MITSUBISHI ELECTRIC CORP3 citations62
US4887137ADec 12, 1989
Semiconductor memory device
MITSUBISHI ELECTRIC CORP1 citations51