Inventor
BABA YOSHIRO
JP34 patents
⚠️ This page may combine multiple inventors who share the name “BABA YOSHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
33 patentsUS6239464B1May 29, 2001
Semiconductor gate trench with covered open ends
TOSHIBA KK86 citations98
US5321289AJun 14, 1994
Vertical MOSFET having trench covered with multilayer gate film
TOSHIBA KK164 citations98
US5126807AJun 30, 1992
Vertical MOS transistor and its production method
TOSHIBA KK193 citations98
US5578508ANov 26, 1996
Vertical power MOSFET and process of fabricating the same
TOSHIBA KK135 citations97
US5242845ASep 7, 1993
Method of production of vertical MOS transistor
TOSHIBA KK121 citations97
US6060747AMay 9, 2000
Semiconductor device
TOSHIBA KK80 citations96
US5770514AJun 23, 1998
Method for manufacturing a vertical transistor having a trench gate
TOSHIBA KK59 citations96
US5282018AJan 25, 1994
Power semiconductor device having gate structure in trench
TOSHIBA KK103 citations96
US5086332AFeb 4, 1992
Planar semiconductor device having high breakdown voltage
TOSHIBA KK60 citations96
US4710794ADec 1, 1987
Composite semiconductor device
TOSHIBA KK78 citations96
US6337498B1Jan 8, 2002
Semiconductor device having directionally balanced gates and manufacturing method
TOSHIBA KK50 citations92
US5917228AJun 29, 1999
Trench-type schottky-barrier diode
TOSHIBA KK21 citations92
US5733810AMar 31, 1998
Method of manufacturing MOS type semiconductor device of vertical structure
TOSHIBA KK41 citations92
US5726088AMar 10, 1998
Method of manufacturing a semiconductor device having a buried insulated gate
TOSHIBA KK30 citations92
US5610422AMar 11, 1997
Semiconductor device having a buried insulated gate
TOSHIBA KK35 citations92
US5589421ADec 31, 1996
Method of manufacturing annealed films
TOSHIBA KK27 citations92
US5554872ASep 10, 1996
Semiconductor device and method of increasing device breakdown voltage of semiconductor device
TOSHIBA KK20 citations92
US5250446AOct 5, 1993
Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
TOSHIBA KK48 citations92
US5126817AJun 30, 1992
Dielectrically isolated structure for use in soi-type semiconductor device
TOSHIBA KK33 citations92
US5084408AJan 28, 1992
Method of making complete dielectric isolation structure in semiconductor integrated circuit
TOSHIBA KK36 citations92
US4968932ANov 6, 1990
Evaluation method for semiconductor device
TOSHIBA KK33 citations92
US6524894B1Feb 25, 2003
Semiconductor device for use in power-switching device and method of manufacturing the same
TOSHIBA KK23 citations91
US5731637AMar 24, 1998
Semiconductor device
TOSHIBA KK27 citations91
US6476429B2Nov 5, 2002
Semiconductor device with breakdown voltage improved by hetero region
TOSHIBA KK9 citations74
US6010950AJan 4, 2000
Method of manufacturing semiconductor bonded substrate
TOSHIBA KK10 citations74
US5029324AJul 2, 1991
Semiconductor device having a semiconductive protection layer
TOSHIBA KK10 citations74
US4780426AOct 25, 1988
Method for manufacturing high-breakdown voltage semiconductor device
TOSHIBA KK17 citations74
US6031276AFeb 29, 2000
Semiconductor device and method of manufacturing the same with stable control of lifetime carriers
TOSHIBA KK7 citations73
US5864180AJan 26, 1999
Semiconductor device and method for manufacturing the same
TOSHIBA KK11 citations73
US5031021AJul 9, 1991
Semiconductor device with a high breakdown voltage
TOSHIBA KK14 citations73
US4984052AJan 8, 1991
Bonded substrate of semiconductor elements having a high withstand voltage
TOSHIBA KK15 citations73
US5877540AMar 2, 1999
Epitaxial-base bipolar transistor
TOSHIBA KK7 citations72
US9966441B2May 8, 2018
Semiconductor device with two-dimensional electron gas
TOSHIBA KK0 citations41