Inventor
HONJO HIROAKI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “HONJO HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV TOHOKU
18 patentsUS10586580B2Mar 10, 2020
Magnetic tunnel junction element and magnetic memory
UNIV TOHOKU2 citations73
US11563169B2Jan 24, 2023
Magnetic tunnel junction element and magnetic memory
UNIV TOHOKU2 citations72
US11081641B2Aug 3, 2021
Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element
UNIV TOHOKU1 citations63
US10749107B2Aug 18, 2020
Method of manufacturing magnetic tunnel coupling element
UNIV TOHOKU1 citations63
US11770981B2Sep 26, 2023
Magnetoresistive element and magnetic memory
UNIV TOHOKU1 citations62
US11258006B2Feb 22, 2022
Magnetic memory element, method for producing same, and magnetic memory
UNIV TOHOKU0 citations62
US11121310B2Sep 14, 2021
Spin electronics element and method of manufacturing thereof
UNIV TOHOKU0 citations61
US12402537B2Aug 26, 2025
Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element
UNIV TOHOKU0 citations52
US11963458B2Apr 16, 2024
Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory
UNIV TOHOKU0 citations52
US11765981B1Sep 19, 2023
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations52
US11462253B2Oct 4, 2022
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations52
US11264565B2Mar 1, 2022
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations52
US10833256B2Nov 10, 2020
Magnetic tunnel junction element and method for manufacturing same
UNIV TOHOKU0 citations52
US10424725B2Sep 24, 2019
Spintronics element
UNIV TOHOKU0 citations51
US10396274B2Aug 27, 2019
Spin electronics element and method of manufacturing thereof
UNIV TOHOKU0 citations51
US10658572B2May 19, 2020
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations50
US10164174B2Dec 25, 2018
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU1 citations50
US10644234B2May 5, 2020
Method for producing magnetic memory comprising magnetic tunnel junction element
UNIV TOHOKU0 citations42
NEC CORP
13 patentsUS6466416B1Oct 15, 2002
Magnetic head, method for making the same and magnetic recording/reproducing device using the same
NEC CORP67 citations96
US6903908B2Jun 7, 2005
Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
NEC CORP16 citations84
US6718621B1Apr 13, 2004
Magnetoresistive head production method
NEC CORP15 citations83
US6791794B2Sep 14, 2004
Magnetic head having an antistripping layer for preventing a magnetic layer from stripping
NEC CORP14 citations82
US7023659B2Apr 4, 2006
Magnetic head having an antistripping layer for preventing a magnetic layer from stripping
NEC CORP6 citations73
US6687082B1Feb 3, 2004
Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatus
NEC CORP11 citations73
US6493195B1Dec 10, 2002
Magnetoresistance element, with lower electrode anti-erosion/flaking layer
NEC CORP13 citations73
US5706152AJan 6, 1998
Thin film magnetic head having improved insulation of upper side lead terminal
NEC CORP8 citations66
US7173793B2Feb 6, 2007
Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatus
NEC CORP2 citations62
US6795271B2Sep 21, 2004
Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatus
NEC CORP2 citations62
US6780530B2Aug 24, 2004
Magnetic material having a high saturation magnetic flux density and a low coercive force
NEC CORP2 citations62
US6592811B1Jul 15, 2003
Magnetic material having a high saturation magnetic flux density and a low coercive force
NEC CORP3 citations62
US7238540B2Jul 3, 2007
Magnetic random access memory and method of manufacturing the same
NEC CORP5 citations61