Inventor
DAUGHTON JAMES M
US47 patents
⚠️ This page may combine multiple inventors who share the name “DAUGHTON JAMES M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NVE CORP
23 patentsUS6777730B2Aug 17, 2004
Antiparallel magnetoresistive memory cells
NVE CORP171 citations99
US6744086B2Jun 1, 2004
Current switched magnetoresistive memory cell
NVE CORP276 citations99
US6713195B2Mar 30, 2004
Magnetic devices using nanocomposite materials
NVE CORP153 citations98
US6538921B2Mar 25, 2003
Circuit selection of magnetic memory cells and related cell structures
NVE CORP81 citations98
US6462541B1Oct 8, 2002
Uniform sense condition magnetic field sensor using differential magnetoresistance
NVE CORP83 citations98
US6963098B2Nov 8, 2005
Thermally operated switch control memory cell
NVE CORP63 citations96
US6535416B1Mar 18, 2003
Magnetic memory coincident thermal pulse data storage
NVE CORP71 citations96
US6404191B2Jun 11, 2002
Read heads in planar monolithic integrated circuit chips
NVE CORP76 citations96
US7390584B2Jun 24, 2008
Spin dependent tunneling devices having reduced topological coupling
NVE CORP20 citations93
US7355822B2Apr 8, 2008
Superparamagnetic field sensing device
NVE CORP13 citations93
US7177178B2Feb 13, 2007
magnetic memory layers thermal pulse transitions
NVE CORP18 citations93
US7148531B2Dec 12, 2006
Magnetoresistive memory SOI cell
NVE CORP27 citations93
US7054118B2May 30, 2006
Superparamagnetic field sensing devices
NVE CORP18 citations93
US6872467B2Mar 29, 2005
Magnetic field sensor with augmented magnetoresistive sensing layer
NVE CORP32 citations92
US6349053B1Feb 19, 2002
Spin dependent tunneling memory
NVE CORP19 citations92
US7468664B2Dec 23, 2008
Enclosure tamper detection and protection
NVE CORP18 citations84
US7023723B2Apr 4, 2006
Magnetic memory layers thermal pulse transitions
NVE CORP12 citations84
US7557562B2Jul 7, 2009
Inverted magnetic isolator
NVE CORP9 citations81
US7813165B2Oct 12, 2010
Magnetic memory layers thermal pulse transitions
NVE CORP4 citations74
US7660081B2Feb 9, 2010
Superparamagnetic platelets field sensing devices
NVE CORP6 citations74
US7266013B2Sep 4, 2007
Magnetic memory layers thermal pulse transitions
NVE CORP8 citations74
US7952345B2May 31, 2011
Inverted magnetic isolator
NVE CORP4 citations60
USRE47583EAug 27, 2019
Circuit selection of magnetic memory cells and related cell structures
NVE CORP0 citations52
NONVOLATILE ELECTRONICS INC
12 patentsUS5617071AApr 1, 1997
Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
NONVOLATILE ELECTRONICS INC116 citations98
US6300617B1Oct 9, 2001
Magnetic digital signal coupler having selected/reversal directions of magnetization
NONVOLATILE ELECTRONICS INC102 citations96
US6021065AFeb 1, 2000
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC76 citations96
US5595830AJan 21, 1997
Magnetoresistive structure with alloy layer having two substantially immiscible components
NONVOLATILE ELECTRONICS INC52 citations96
US5569544AOct 29, 1996
Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
NONVOLATILE ELECTRONICS INC66 citations96
US5424236AJun 13, 1995
Method for forming offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC72 citations96
US5251170AOct 5, 1993
Offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC92 citations96
US6168860B1Jan 2, 2001
Magnetic structure with stratified layers
NONVOLATILE ELECTRONICS INC27 citations93
US6275411B1Aug 14, 2001
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC29 citations92
US6072382AJun 6, 2000
Spin dependent tunneling sensor
NONVOLATILE ELECTRONICS INC41 citations92
US5729137AMar 17, 1998
Magnetic field sensors individualized field reducers
NONVOLATILE ELECTRONICS INC32 citations91
US6340886B1Jan 22, 2002
Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
NONVOLATILE ELECTRONICS INC13 citations74
HONEYWELL INC
10 patentsUS4780848AOct 25, 1988
Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
HONEYWELL INC184 citations99
US4731757AMar 15, 1988
Magnetoresistive memory including thin film storage cells having tapered ends
HONEYWELL INC122 citations95
US4918655AApr 17, 1990
Magnetic device integrated circuit interconnection system
HONEYWELL INC31 citations93
US4751677AJun 14, 1988
Differential arrangement magnetic memory cell
HONEYWELL INC84 citations93
US4582975AApr 15, 1986
Circuit chip
HONEYWELL INC30 citations93
US4152714AMay 1, 1979
Semiconductor apparatus
HONEYWELL INC44 citations92
US4506139AMar 19, 1985
Circuit chip
HONEYWELL INC15 citations74
US5060193AOct 22, 1991
Magnetic state entry assurance
HONEYWELL INC20 citations73
US4044371AAug 23, 1977
Plurality of precise temperature resistors formed in monolithic integrated circuits
HONEYWELL INC18 citations70
US4092662AMay 30, 1978
Sensistor apparatus
HONEYWELL INC5 citations63