Inventor

NAKAHATA SEIJI

JP94 patents

⚠️ This page may combine multiple inventors who share the name “NAKAHATA SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKAHATA SEIJI

SUMITOMO ELECTRIC INDUSTRIES

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Si3N4 ceramic, Si-base composition for production thereof and processes for producing these

AlxInyGa1−x−yN mixture crystal substrate

Single crystal GaN substrate, method of growing same and method of producing same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride semiconductor substrate and method of producing same

III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate

Single crystal GaN substrate semiconductor device

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate

Fabrication method and fabrication apparatus of group III nitride crystal substance

Ceramics porous body and method of preparing the same

Apparatus and method for measuring a physical property of a sample using an electron spin resonance spectrum of the sample

GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device

Nitride semiconductor substrate and method of producing same

Method of producing a nitride semiconductor device and nitride semiconductor device

Group III-V crystal and manufacturing method thereof

Si3N4 ceramic, Si-base composition for its production, and method for its production

Silicon nitride sinter having high thermal conductivity and process for preparing the same

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Silicon nitride sintered body, method of preparing the same and nitrided compact

Sintered body of silicon nitride and method of producing the same

Method of preparing a ceramic porous body

Aluminum nitride sintered body and method of producing the same

Aluminum nitride sintered body and method of producing the same

Aluminum nitride powder having surface layer containing oxynitride

Aluminum nitride sintered body and method of preparing the same

Gallium nitride substrate

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Composite of III-nitride crystal on laterally stacked substrates

Method of manufacturing III-nitride crystal

III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device

Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device

Fabrication method and fabrication apparatus of group III nitride crystal substance

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

MIZUHARA NAHO

Group-III nitride crystal composite

Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal

SUMITO ELECTRIC IND LTD

A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

UEMATSU KOJI

Group III nitride crystal and method for producing the same

FUJIWARA SHINSUKE

GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof

ISHIBASHI KEIJI

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

SATO FUMITAKA

Conductive nitride semiconductor substrate and method for producing the same