Inventor
LIN JINGYU
US21 patents
⚠️ This page may combine multiple inventors who share the name “LIN JINGYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV TEXAS TECH SYSTEM
5 patentsUS11460723B1Oct 4, 2022
Semiconductor optical phased arrays (OPA's) and methods related thereto
UNIV TEXAS TECH SYSTEM4 citations73
US11747658B2Sep 5, 2023
Semiconductor optical phased arrays (OPA's) and methods related thereto
UNIV TEXAS TECH SYSTEM0 citations62
US11195968B2Dec 7, 2021
Solid-state neutron detector
UNIV TEXAS TECH SYSTEM1 citations58
US10714651B2Jul 14, 2020
Solid-state neutron detector
UNIV TEXAS TECH SYSTEM1 citations58
US12322921B2Jun 3, 2025
Optical gain materials for high energy lasers and laser illuminators and methods of making and using same
UNIV TEXAS TECH SYSTEM0 citations48
AC LED LIGHTING L L C
4 patentsUS7221044B2May 22, 2007
Heterogeneous integrated high voltage DC/AC light emitter
AC LED LIGHTING L L C190 citations98
US7213942B2May 8, 2007
Light emitting diodes for high AC voltage operation and general lighting
AC LED LIGHTING L L C159 citations98
US7210819B2May 1, 2007
Light emitting diodes for high AC voltage operation and general lighting
AC LED LIGHTING L L C53 citations94
US7714348B2May 11, 2010
AC/DC light emitting diodes with integrated protection mechanism
AC LED LIGHTING L L C51 citations93
UNIV KANSAS STATE
4 patentsUS6410940B1Jun 25, 2002
Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
UNIV KANSAS STATE202 citations98
US5101109AMar 31, 1992
Persistent photoconductivity quenching effect crystals and electrical apparatus using same
UNIV KANSAS STATE10 citations74
US5072122ADec 10, 1991
Charge storage image device using persistent photoconductivity crystals
UNIV KANSAS STATE14 citations74
US7193784B2Mar 20, 2007
Nitride microlens
UNIV KANSAS STATE7 citations68
JIANG HONGXING
3 patentsUS6957899B2Oct 25, 2005
Light emitting diodes for high AC voltage operation and general lighting
JIANG HONGXING129 citations96
US9093581B2Jul 28, 2015
Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
JIANG HONGXING14 citations78
US8227328B2Jul 24, 2012
Er doped III-nitride materials and devices synthesized by MOCVD
JIANG HONGXING9 citations76