Inventor

OSANO KOICHI

JP38 patents

⚠️ This page may combine multiple inventors who share the name “OSANO KOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OSANO KOICHI

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor

Compositionally modulated, nitrided alloy films and method for making the same

Magnetic nitride film

Method for making soft magnetic film

Soft magnetic alloy films

Magnetic head and method of manufacturing the same

Soft magnetic alloy films having a modulated nitrogen content

Magnetic nitride film

Nitrogen-containing magnetic alloy film

Laminated magnetic materials

Method for forming a soft magnetic nitride layer on a magnetic head

Magnetic head and magnetic recording/reproducing apparatus

Magnetic head, method for producing the same, video recording and reproduction apparatus including the magnetic head, and video camera including the magnetic head

Method and apparatus for analysis of magnetic characteristics of magnetic device, magnetic head, and magnetic recording and reproducing apparatus

Magnetic head and manufacturing method therefor

Method and apparatus for analysis of magnetic characteristics of magnetic device, magnetic head, and magnetic recording and reproducing apparatus

Method for producing a magnetic head, the magnetic head including a pair of magnetic core halves

Magnetic head with multilayer film including metal magnetic films and non-magnetic films and magnetic recording/reproducing device

PANASONIC CORP

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

Resistance variable element and resistance variable memory apparatus

Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage

Memory device and semiconductor integrated circuit

Memory device, memory circuit and semiconductor integrated circuit having variable resistance

Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method therefor

Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus

Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor

Electric element, memory device, and semiconductor integrated circuit

Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus

Memory element, memory apparatus, and semiconductor integrated circuit

Electric element, memory device, and semiconductor integrated circuit

Electric element, memory device, and semiconductor integrated circuit

Memory device, memory circuit and semiconductor integrated circuit having variable resistance

OSANO KOICHI

Variable resistance nonvolatile memory apparatus

Nonvolatile memory element having a tantalum oxide variable resistance layer

Nonvolatile memory element having a tantalum oxide variable resistance layer

Thin film memory device having a variable resistance

KANZAWA YOSHIHIKO

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

FUJII SATORU

Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element