Inventor
JEON SANGHUN
KR19 patents
⚠️ This page may combine multiple inventors who share the name “JEON SANGHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LINE CORP
6 patentsUS10205732B2Feb 12, 2019
Method, apparatus, system, and non-transitory medium for protecting a file
LINE CORP2 citations69
US10740443B2Aug 11, 2020
System and method for code obfuscation of application
LINE CORP1 citations59
US10255443B2Apr 9, 2019
Method, apparatus, system and non-transitory computer readable medium for code protection
LINE CORP1 citations59
US10963563B2Mar 30, 2021
Method and system for evaluating security of application
LINE CORP0 citations49
US10379886B2Aug 13, 2019
Method and system for enhancing loading speed of intermediate language file
LINE CORP0 citations38
US10078498B2Sep 18, 2018
Method, apparatus, system, and non-transitory computer readable medium for extending at least one function of a package file
LINE CORP0 citations38
KOREA ADVANCED INST SCI & TECH
4 patentsUS12279436B2Apr 15, 2025
Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same
KOREA ADVANCED INST SCI & TECH0 citations62
US12356690B2Jul 8, 2025
Triple structure cell and element including the same
KOREA ADVANCED INST SCI & TECH0 citations61
US12268008B2Apr 1, 2025
3D non-volatile memory, operating method of the same and manufacturing method of the same
KOREA ADVANCED INST SCI & TECH0 citations54
US11729992B2Aug 15, 2023
Nonvolatile memory device and cross point array device including the same
KOREA ADVANCED INST SCI & TECH1 citations54
SAMSUNG ELECTRONICS CO LTD
4 patentsUS12520498B2Jan 6, 2026
Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US11950429B2Apr 2, 2024
Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US10374074B2Aug 6, 2019
Flexible bimodal sensor
SAMSUNG ELECTRONICS CO LTD1 citations59
US12336182B2Jun 17, 2025
Semiconductor device having 3D stacked structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations56